Highly conductive n-type MC-Si:H films deposited at very low temperature (2002)
- Authors:
- USP affiliated authors: DIRANI, ELY ANTONIO TADEU - EP ; ANDRADE, ADNEI MELGES DE - EP ; FONSECA, FERNANDO JOSEPETTI - EP
- Unidade: EP
- Assunto: MICROELETRÔNICA
- Language: Inglês
- Imprenta:
- Publisher: The Electrochemical Society
- Publisher place: Pennington
- Date published: 2002
- Source:
- Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO 2002
-
ABNT
NARDES, Alexandre Mantovani et al. Highly conductive n-type MC-Si:H films deposited at very low temperature. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 28 dez. 2025. -
APA
Nardes, A. M., Dirani, E. A. T., Andrade, A. M. de, & Fonseca, F. J. (2002). Highly conductive n-type MC-Si:H films deposited at very low temperature. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society. -
NLM
Nardes AM, Dirani EAT, Andrade AM de, Fonseca FJ. Highly conductive n-type MC-Si:H films deposited at very low temperature. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 dez. 28 ] -
Vancouver
Nardes AM, Dirani EAT, Andrade AM de, Fonseca FJ. Highly conductive n-type MC-Si:H films deposited at very low temperature. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 dez. 28 ] - Low operating voltage of an ITO/MEH-PPV/AI light emmiting device
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