High density-PECVD silicon oxide deposition by TEOS and oxygen at low temperature (375 o. C) (2002)
- Authors:
- Autor USP: MORIMOTO, NILTON ITIRO - EP
- Unidade: EP
- Assunto: MICROELETRÔNICA
- Language: Inglês
- Imprenta:
- Publisher: The Electrochemical Society
- Publisher place: Pennington
- Date published: 2002
- Source:
- Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO
-
ABNT
VIANA, Carlos Eduardo e SANTOS, J.L.R. e MORIMOTO, Nilton Itiro. High density-PECVD silicon oxide deposition by TEOS and oxygen at low temperature (375 o. C). Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 11 mar. 2026. -
APA
Viana, C. E., Santos, J. L. R., & Morimoto, N. I. (2002). High density-PECVD silicon oxide deposition by TEOS and oxygen at low temperature (375 o. C). In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society. -
NLM
Viana CE, Santos JLR, Morimoto NI. High density-PECVD silicon oxide deposition by TEOS and oxygen at low temperature (375 o. C). In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2026 mar. 11 ] -
Vancouver
Viana CE, Santos JLR, Morimoto NI. High density-PECVD silicon oxide deposition by TEOS and oxygen at low temperature (375 o. C). In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2026 mar. 11 ] - Mechanical properties of silicon oxide films deposited by PECVD-TEOS for application in MEMS structures and sensors
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