Electrical characteristics of PECVD silicon oxide deposited with low TEOS contents at low temperatures (2004)
- Authors:
- Autor USP: MORIMOTO, NILTON ITIRO - EP
- Unidade: EP
- Subjects: FILMES FINOS; ELETROQUÍMICA; MICROELETRÔNICA
- Language: Inglês
- Imprenta:
- Publisher: The Electrochemical Society
- Publisher place: Pennington
- Date published: 2004
- Source:
- Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO
-
ABNT
ROCHA, Otávio Filipe da et al. Electrical characteristics of PECVD silicon oxide deposited with low TEOS contents at low temperatures. 2004, Anais.. Pennington: The Electrochemical Society, 2004. . Acesso em: 14 fev. 2026. -
APA
Rocha, O. F. da, Morimoto, N. I., Viana, C. E., & Gonçalves, L. C. D. (2004). Electrical characteristics of PECVD silicon oxide deposited with low TEOS contents at low temperatures. In Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. Pennington: The Electrochemical Society. -
NLM
Rocha OF da, Morimoto NI, Viana CE, Gonçalves LCD. Electrical characteristics of PECVD silicon oxide deposited with low TEOS contents at low temperatures. Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2026 fev. 14 ] -
Vancouver
Rocha OF da, Morimoto NI, Viana CE, Gonçalves LCD. Electrical characteristics of PECVD silicon oxide deposited with low TEOS contents at low temperatures. Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2026 fev. 14 ] - Desenvolvimento de um sistema multicâmara integrado para deposição e recozimento de filmes 'SI''O IND.2'
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