Method to obtain TEOS PECVD silicon oxide thick layers for optoelectronics devices application. (em CD-Rom) (1997)
- Authors:
- Autor USP: MORIMOTO, NILTON ITIRO - EP
- Unidade: EP
- Subjects: CIRCUITOS INTEGRADOS; SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Publisher: SBMICRO/EFEI
- Publisher place: Itajubá
- Date published: 1997
- Source:
- Título: Proceedings
- Conference titles: Conference of the Brazilian Microelectronics Society
-
ABNT
BULLA, Douglas Anderson Pereira e MORIMOTO, Nilton Itiro. Method to obtain TEOS PECVD silicon oxide thick layers for optoelectronics devices application. (em CD-Rom). 1997, Anais.. Itajubá: SBMICRO/EFEI, 1997. . Acesso em: 14 fev. 2026. -
APA
Bulla, D. A. P., & Morimoto, N. I. (1997). Method to obtain TEOS PECVD silicon oxide thick layers for optoelectronics devices application. (em CD-Rom). In Proceedings. Itajubá: SBMICRO/EFEI. -
NLM
Bulla DAP, Morimoto NI. Method to obtain TEOS PECVD silicon oxide thick layers for optoelectronics devices application. (em CD-Rom). Proceedings. 1997 ;[citado 2026 fev. 14 ] -
Vancouver
Bulla DAP, Morimoto NI. Method to obtain TEOS PECVD silicon oxide thick layers for optoelectronics devices application. (em CD-Rom). Proceedings. 1997 ;[citado 2026 fev. 14 ] - Desenvolvimento de um sistema multicâmara integrado para deposição e recozimento de filmes 'SI''O IND.2'
- Mechanical properties of silicon oxide films deposited by PECVD-TEOS for application in MEMS structures and sensors
- Mach-zehnder interferometer simulation results for integrated optical pressure sensor
- SIPOS thin films deposition process for power devices passivation
- Semiconductor light emitting diodes: an empirical study for use in fiber optic gyroscopes
- Caracterização de filmes finos de siliceto de titanio por técnicas de difração de Raio X
- Correlation between mechanical and electrical properties of silicon oxide deposited by PECVD-TEOS at low temperature
- Na Poli, nanosensores para carros e iogurtes
- Implementation of an optical integrated pressure sensor and experimental results
- Electrical characteristics of PECVD silicon oxide deposited with low TEOS contents at low temperatures
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