Mechanical properties of silicon oxide films deposited by PECVD-TEOS for application in MEMS structures and sensors (2002)
- Authors:
- Autor USP: MORIMOTO, NILTON ITIRO - EP
- Unidade: EP
- Assunto: MICROELETRÔNICA
- Language: Inglês
- Imprenta:
- Publisher: The Electrochemical Society
- Publisher place: Pennington
- Date published: 2002
- Source:
- Título do periódico: Microelectronics Technology and Devices SBMICRO 2002
- Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO 2002, Porto Alegre, 2002
-
ABNT
GONÇALVES, Lucas Gonçalves Dias et al. Mechanical properties of silicon oxide films deposited by PECVD-TEOS for application in MEMS structures and sensors. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 18 abr. 2024. -
APA
Gonçalves, L. G. D., Silva, A. N. R. da, Alfano, C. F., Santos, J. C., & Morimoto, N. I. (2002). Mechanical properties of silicon oxide films deposited by PECVD-TEOS for application in MEMS structures and sensors. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society. -
NLM
Gonçalves LGD, Silva ANR da, Alfano CF, Santos JC, Morimoto NI. Mechanical properties of silicon oxide films deposited by PECVD-TEOS for application in MEMS structures and sensors. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2024 abr. 18 ] -
Vancouver
Gonçalves LGD, Silva ANR da, Alfano CF, Santos JC, Morimoto NI. Mechanical properties of silicon oxide films deposited by PECVD-TEOS for application in MEMS structures and sensors. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2024 abr. 18 ] - Method to obtain TEOS PECVD silicon oxide thick layers for optoelectronics devices applications. (em CD-Rom)
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