ReP USP - Resultado da busca

Parte de monografia/livro
Determination of the silicon film thickness and back oxide charge density on graded-channel SOI nMOSFETs (2003)
Nicolett, Aparecido Sirley; Martino, João Antonio ; Pavanello, Marcelo Antonio
Source: Microelectronic Technology and Devices SBMicro 2003. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
NICOLETT, Aparecido Sirley e MARTINO, João Antonio e PAVANELLO, Marcelo Antonio. Determination of the silicon film thickness and back oxide charge density on graded-channel SOI nMOSFETs. Microelectronic Technology and Devices SBMicro 2003. Tradução . Pennington: Electrochemical Society, 2003. . . Acesso em: 18 nov. 2024.
APA
Nicolett, A. S., Martino, J. A., & Pavanello, M. A. (2003). Determination of the silicon film thickness and back oxide charge density on graded-channel SOI nMOSFETs. In Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society.
NLM
Nicolett AS, Martino JA, Pavanello MA. Determination of the silicon film thickness and back oxide charge density on graded-channel SOI nMOSFETs. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2024 nov. 18 ]
Vancouver
Nicolett AS, Martino JA, Pavanello MA. Determination of the silicon film thickness and back oxide charge density on graded-channel SOI nMOSFETs. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2024 nov. 18 ]
Parte de monografia/livro
Analysis of the capacitance vs. voltage in graded channel SOI capacitor (2003)
Sonnenberg, Victor ; Martino, João Antonio
Source: Microelectronic Technology and Devices SBMicro 2003. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO 2003. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
SONNENBERG, Victor e MARTINO, João Antonio. Analysis of the capacitance vs. voltage in graded channel SOI capacitor. Microelectronic Technology and Devices SBMicro 2003. Tradução . Pennington: Electrochemical Society, 2003. . . Acesso em: 18 nov. 2024.
APA
Sonnenberg, V., & Martino, J. A. (2003). Analysis of the capacitance vs. voltage in graded channel SOI capacitor. In Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society.
NLM
Sonnenberg V, Martino JA. Analysis of the capacitance vs. voltage in graded channel SOI capacitor. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2024 nov. 18 ]
Vancouver
Sonnenberg V, Martino JA. Analysis of the capacitance vs. voltage in graded channel SOI capacitor. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2024 nov. 18 ]
Parte de monografia/livro
Influence of RF frequency on production of adsorbent organic films by PECVD (2003)
Nascimento Filho, Antonio Pereira do; Hamanaka, Cristian Otsuka; Jesus, Dosil Pereira de; Silva, Maria Lucia Pereira da; Demarquette, Nicole Raymonde
Source: Microelectronic Technology and Devices SBMicro 2003. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
NASCIMENTO FILHO, Antonio Pereira do et al. Influence of RF frequency on production of adsorbent organic films by PECVD. Microelectronic Technology and Devices SBMicro 2003. Tradução . Pennington: Electrochemical Society, 2003. . . Acesso em: 18 nov. 2024.
APA
Nascimento Filho, A. P. do, Hamanaka, C. O., Jesus, D. P. de, Silva, M. L. P. da, & Demarquette, N. R. (2003). Influence of RF frequency on production of adsorbent organic films by PECVD. In Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society.
NLM
Nascimento Filho AP do, Hamanaka CO, Jesus DP de, Silva MLP da, Demarquette NR. Influence of RF frequency on production of adsorbent organic films by PECVD. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2024 nov. 18 ]
Vancouver
Nascimento Filho AP do, Hamanaka CO, Jesus DP de, Silva MLP da, Demarquette NR. Influence of RF frequency on production of adsorbent organic films by PECVD. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2024 nov. 18 ]
Parte de monografia/livro
Study of series resistance and effective channel length behavior comparing graded-channel and conventional SOI nMOSFETs (2003)
Almeida, Galba Falce de; Nicolett, Aparecido Sirley; Martino, João Antonio
Source: Microelectronic Technology and Devices SBMicro 2003. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
ALMEIDA, Galba Falce de e NICOLETT, Aparecido Sirley e MARTINO, João Antonio. Study of series resistance and effective channel length behavior comparing graded-channel and conventional SOI nMOSFETs. Microelectronic Technology and Devices SBMicro 2003. Tradução . Pennington: Electrochemical Society, 2003. . . Acesso em: 18 nov. 2024.
APA
Almeida, G. F. de, Nicolett, A. S., & Martino, J. A. (2003). Study of series resistance and effective channel length behavior comparing graded-channel and conventional SOI nMOSFETs. In Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society.
NLM
Almeida GF de, Nicolett AS, Martino JA. Study of series resistance and effective channel length behavior comparing graded-channel and conventional SOI nMOSFETs. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2024 nov. 18 ]
Vancouver
Almeida GF de, Nicolett AS, Martino JA. Study of series resistance and effective channel length behavior comparing graded-channel and conventional SOI nMOSFETs. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2024 nov. 18 ]
Parte de monografia/livro
Formation of nickel silicides onto (100) silicon wafer surfaces using a thin platinum interlayer (2003)
Reis, Ronaldo Willian; Santos Filho, Sebastião Gomes dos ; Doi, Ioshiaki; Swart, Jacobus Willibrordus
Source: Microelectronic Technology and Devices SBMicro 2003. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
REIS, Ronaldo Willian et al. Formation of nickel silicides onto (100) silicon wafer surfaces using a thin platinum interlayer. Microelectronic Technology and Devices SBMicro 2003. Tradução . Pennington: Electrochemical Society, 2003. . . Acesso em: 18 nov. 2024.
APA
Reis, R. W., Santos Filho, S. G. dos, Doi, I., & Swart, J. W. (2003). Formation of nickel silicides onto (100) silicon wafer surfaces using a thin platinum interlayer. In Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society.
NLM
Reis RW, Santos Filho SG dos, Doi I, Swart JW. Formation of nickel silicides onto (100) silicon wafer surfaces using a thin platinum interlayer. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2024 nov. 18 ]
Vancouver
Reis RW, Santos Filho SG dos, Doi I, Swart JW. Formation of nickel silicides onto (100) silicon wafer surfaces using a thin platinum interlayer. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2024 nov. 18 ]
Relatorio tecnico
Generation and characterization of polymeric tridimentional microstructure for micromachine application (2003)
Mousinho, Ana Paula; Mansano, Ronaldo Domingues ; Arruda, Antonio Carlos Santos de
Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
MOUSINHO, Ana Paula e MANSANO, Ronaldo Domingues e ARRUDA, Antonio Carlos Santos de. Generation and characterization of polymeric tridimentional microstructure for micromachine application. . Dearborn: Society of Manufacturing Engineers. . Acesso em: 18 nov. 2024. , 2003
APA
Mousinho, A. P., Mansano, R. D., & Arruda, A. C. S. de. (2003). Generation and characterization of polymeric tridimentional microstructure for micromachine application. Dearborn: Society of Manufacturing Engineers.
NLM
Mousinho AP, Mansano RD, Arruda ACS de. Generation and characterization of polymeric tridimentional microstructure for micromachine application. 2003 ;[citado 2024 nov. 18 ]
Vancouver
Mousinho AP, Mansano RD, Arruda ACS de. Generation and characterization of polymeric tridimentional microstructure for micromachine application. 2003 ;[citado 2024 nov. 18 ]
Trabalho de evento
A simple model for a new SOI MOSFET with asymmetric trapezoidal gate (2003)
Giacomini, Renato Camargo; Martino, João Antonio
Source: Proceedings. Conference titles: Workshop IBERSHIP. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
GIACOMINI, Renato Camargo e MARTINO, João Antonio. A simple model for a new SOI MOSFET with asymmetric trapezoidal gate. 2003, Anais.. Havana: Escola Politécnica, Universidade de São Paulo, 2003. . Acesso em: 18 nov. 2024.
APA
Giacomini, R. C., & Martino, J. A. (2003). A simple model for a new SOI MOSFET with asymmetric trapezoidal gate. In Proceedings. Havana: Escola Politécnica, Universidade de São Paulo.
NLM
Giacomini RC, Martino JA. A simple model for a new SOI MOSFET with asymmetric trapezoidal gate. Proceedings. 2003 ;[citado 2024 nov. 18 ]
Vancouver
Giacomini RC, Martino JA. A simple model for a new SOI MOSFET with asymmetric trapezoidal gate. Proceedings. 2003 ;[citado 2024 nov. 18 ]
Trabalho de evento
Operation of double gate grated-channel transistors at low temperatures (2003)
Pavanello, Marcelo Antonio ; Martino, João Antonio ; Chung, Tae Mo; Kranti, A.; Raskin, Jean-Pierre; Flandre, Denis
Source: Proceedings. Conference titles: International Symposium on Low Temperature Electronics. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
PAVANELLO, Marcelo Antonio et al. Operation of double gate grated-channel transistors at low temperatures. 2003, Anais.. Pennington: The Electrochemical Society, 2003. . Acesso em: 18 nov. 2024.
APA
Pavanello, M. A., Martino, J. A., Chung, T. M., Kranti, A., Raskin, J. -P., & Flandre, D. (2003). Operation of double gate grated-channel transistors at low temperatures. In Proceedings. Pennington: The Electrochemical Society.
NLM
Pavanello MA, Martino JA, Chung TM, Kranti A, Raskin J-P, Flandre D. Operation of double gate grated-channel transistors at low temperatures. Proceedings. 2003 ;[citado 2024 nov. 18 ]
Vancouver
Pavanello MA, Martino JA, Chung TM, Kranti A, Raskin J-P, Flandre D. Operation of double gate grated-channel transistors at low temperatures. Proceedings. 2003 ;[citado 2024 nov. 18 ]
Parte de monografia/livro
Analysis on CG SOI MOSFET analog parameters at high temperatures (2003)
Galeti, Milene; Pavanello, Marcelo Antonio ; Martino, João Antonio
Source: Microelectronic Technology and Devices SBMicro 2003. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
GALETI, Milene e PAVANELLO, Marcelo Antonio e MARTINO, João Antonio. Analysis on CG SOI MOSFET analog parameters at high temperatures. Microelectronic Technology and Devices SBMicro 2003. Tradução . Pennington: Electrochemical Society, 2003. . . Acesso em: 18 nov. 2024.
APA
Galeti, M., Pavanello, M. A., & Martino, J. A. (2003). Analysis on CG SOI MOSFET analog parameters at high temperatures. In Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society.
NLM
Galeti M, Pavanello MA, Martino JA. Analysis on CG SOI MOSFET analog parameters at high temperatures. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2024 nov. 18 ]
Vancouver
Galeti M, Pavanello MA, Martino JA. Analysis on CG SOI MOSFET analog parameters at high temperatures. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2024 nov. 18 ]
Parte de monografia/livro
Low operating voltage of an ITO/MEH-PPV/AI light emmiting device (2003)
Neves, José Antônio Rocha das; Andrade, Adnei Melges de ; Dirani, Ely Antonio Tadeu ; Santos, Emerson Roberto ; Fonseca, Fernando Josepetti
Source: Microelectronic Technology and Devices SBMicro 2003. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO 2003. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
NEVES, José Antônio Rocha das et al. Low operating voltage of an ITO/MEH-PPV/AI light emmiting device. Microelectronic Technology and Devices SBMicro 2003. Tradução . Pennington: Electrochemical Society, 2003. . . Acesso em: 18 nov. 2024.
APA
Neves, J. A. R. das, Andrade, A. M. de, Dirani, E. A. T., Santos, E. R., & Fonseca, F. J. (2003). Low operating voltage of an ITO/MEH-PPV/AI light emmiting device. In Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society.
NLM
Neves JAR das, Andrade AM de, Dirani EAT, Santos ER, Fonseca FJ. Low operating voltage of an ITO/MEH-PPV/AI light emmiting device. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2024 nov. 18 ]
Vancouver
Neves JAR das, Andrade AM de, Dirani EAT, Santos ER, Fonseca FJ. Low operating voltage of an ITO/MEH-PPV/AI light emmiting device. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2024 nov. 18 ]
Parte de monografia/livro
Simulations of silicon microstructure for preconcentration of metallic ions (2003)
Silva, José Alberto Fracassi da; Furlan, Rogério ; Simões, Eliphas Wagner; Silva, Maria Lucia Pereira da; Pereira, Marcos Tadeu
Source: Microelectronic Technology and Devices SBMicro 2003. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
SILVA, José Alberto Fracassi da et al. Simulations of silicon microstructure for preconcentration of metallic ions. Microelectronic Technology and Devices SBMicro 2003. Tradução . Pennington: Electrochemical Society, 2003. . Disponível em: https://repositorio.usp.br/directbitstream/c522e842-8ccc-410e-9a47-c4e00003c8a1/pereira-2003-simulations%20of%20silicon%20microstructure.pdf. Acesso em: 18 nov. 2024.
APA
Silva, J. A. F. da, Furlan, R., Simões, E. W., Silva, M. L. P. da, & Pereira, M. T. (2003). Simulations of silicon microstructure for preconcentration of metallic ions. In Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society. Recuperado de https://repositorio.usp.br/directbitstream/c522e842-8ccc-410e-9a47-c4e00003c8a1/pereira-2003-simulations%20of%20silicon%20microstructure.pdf
NLM
Silva JAF da, Furlan R, Simões EW, Silva MLP da, Pereira MT. Simulations of silicon microstructure for preconcentration of metallic ions [Internet]. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2024 nov. 18 ] Available from: https://repositorio.usp.br/directbitstream/c522e842-8ccc-410e-9a47-c4e00003c8a1/pereira-2003-simulations%20of%20silicon%20microstructure.pdf
Vancouver
Silva JAF da, Furlan R, Simões EW, Silva MLP da, Pereira MT. Simulations of silicon microstructure for preconcentration of metallic ions [Internet]. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2024 nov. 18 ] Available from: https://repositorio.usp.br/directbitstream/c522e842-8ccc-410e-9a47-c4e00003c8a1/pereira-2003-simulations%20of%20silicon%20microstructure.pdf
Parte de monografia/livro
Fabrication of submicron structures in polycristalline silicon by reactive ion etching using fluorine- and chlorine- containing plasmas (2003)
Reyes Betanzo, C; Moshkalyov, Stanislav A; Seabra, Antonio Carlos ; Swart, Jacobus Willibrordus
Source: Microelectronic Technology and Devices SBMicro 2003. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
REYES BETANZO, C et al. Fabrication of submicron structures in polycristalline silicon by reactive ion etching using fluorine- and chlorine- containing plasmas. Microelectronic Technology and Devices SBMicro 2003. Tradução . Pennington: Electrochemical Society, 2003. . . Acesso em: 18 nov. 2024.
APA
Reyes Betanzo, C., Moshkalyov, S. A., Seabra, A. C., & Swart, J. W. (2003). Fabrication of submicron structures in polycristalline silicon by reactive ion etching using fluorine- and chlorine- containing plasmas. In Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society.
NLM
Reyes Betanzo C, Moshkalyov SA, Seabra AC, Swart JW. Fabrication of submicron structures in polycristalline silicon by reactive ion etching using fluorine- and chlorine- containing plasmas. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2024 nov. 18 ]
Vancouver
Reyes Betanzo C, Moshkalyov SA, Seabra AC, Swart JW. Fabrication of submicron structures in polycristalline silicon by reactive ion etching using fluorine- and chlorine- containing plasmas. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2024 nov. 18 ]
Parte de monografia/livro
An improved current model for edgeless SOI MOSFETs (2003)
Giacomini, Renato Camargo; Martino, João Antonio
Source: Microelectronic Technology and Devices SBMicro 2003. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
GIACOMINI, Renato Camargo e MARTINO, João Antonio. An improved current model for edgeless SOI MOSFETs. Microelectronic Technology and Devices SBMicro 2003. Tradução . Pennington: Electrochemical Society, 2003. . . Acesso em: 18 nov. 2024.
APA
Giacomini, R. C., & Martino, J. A. (2003). An improved current model for edgeless SOI MOSFETs. In Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society.
NLM
Giacomini RC, Martino JA. An improved current model for edgeless SOI MOSFETs. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2024 nov. 18 ]
Vancouver
Giacomini RC, Martino JA. An improved current model for edgeless SOI MOSFETs. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2024 nov. 18 ]
Parte de monografia/livro
In-situ and ion implantation nitrogen doping on near stoichiometric a-SiC:H films (2003)
Oliveira, Alessandro Ricardo de; Paez Carreño, Marcelo Nelson
Source: Microelectronic Technology and Devices SBMicro 2003. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
OLIVEIRA, Alessandro Ricardo de e PAEZ CARREÑO, Marcelo Nelson. In-situ and ion implantation nitrogen doping on near stoichiometric a-SiC:H films. Microelectronic Technology and Devices SBMicro 2003. Tradução . Pennington: Electrochemical Society, 2003. . . Acesso em: 18 nov. 2024.
APA
Oliveira, A. R. de, & Paez Carreño, M. N. (2003). In-situ and ion implantation nitrogen doping on near stoichiometric a-SiC:H films. In Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society.
NLM
Oliveira AR de, Paez Carreño MN. In-situ and ion implantation nitrogen doping on near stoichiometric a-SiC:H films. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2024 nov. 18 ]
Vancouver
Oliveira AR de, Paez Carreño MN. In-situ and ion implantation nitrogen doping on near stoichiometric a-SiC:H films. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2024 nov. 18 ]
Parte de monografia/livro
Characterization of electrospinning process using blends of polyacrylonitrile and carbon particles (2003)
Silva, Ana Neilde Rodrigues da; Furlan, Rogério ; Ramos, I.; Silva, Maria Lucia Pereira da; Fachini, E.; Santiago-Avilés, Jorge Juan
Source: Microelectronic Technology and Devices SBMicro 2003. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Subjects: MICROELETRÔNICA, BLENDAS
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ABNT
SILVA, Ana Neilde Rodrigues da et al. Characterization of electrospinning process using blends of polyacrylonitrile and carbon particles. Microelectronic Technology and Devices SBMicro 2003. Tradução . Pennington: Electrochemical Society, 2003. . . Acesso em: 18 nov. 2024.
APA
Silva, A. N. R. da, Furlan, R., Ramos, I., Silva, M. L. P. da, Fachini, E., & Santiago-Avilés, J. J. (2003). Characterization of electrospinning process using blends of polyacrylonitrile and carbon particles. In Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society.
NLM
Silva ANR da, Furlan R, Ramos I, Silva MLP da, Fachini E, Santiago-Avilés JJ. Characterization of electrospinning process using blends of polyacrylonitrile and carbon particles. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2024 nov. 18 ]
Vancouver
Silva ANR da, Furlan R, Ramos I, Silva MLP da, Fachini E, Santiago-Avilés JJ. Characterization of electrospinning process using blends of polyacrylonitrile and carbon particles. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2024 nov. 18 ]
Parte de monografia/livro
Photoconductivity of semi-insulating polysilicon (2003)
Lantin, Daniela Garrote; Onoda, Edyr; Zambom, Luís da Silva ; Mansano, Ronaldo Domingues
Source: Microelectronic Technology and Devices SBMicro 2003. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
LANTIN, Daniela Garrote et al. Photoconductivity of semi-insulating polysilicon. Microelectronic Technology and Devices SBMicro 2003. Tradução . Pennington: Electrochemical Society, 2003. . . Acesso em: 18 nov. 2024.
APA
Lantin, D. G., Onoda, E., Zambom, L. da S., & Mansano, R. D. (2003). Photoconductivity of semi-insulating polysilicon. In Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society.
NLM
Lantin DG, Onoda E, Zambom L da S, Mansano RD. Photoconductivity of semi-insulating polysilicon. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2024 nov. 18 ]
Vancouver
Lantin DG, Onoda E, Zambom L da S, Mansano RD. Photoconductivity of semi-insulating polysilicon. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2024 nov. 18 ]
Parte de monografia/livro
Electrochemical process for silicon tips fabrication (2003)
Dantas, Michel Oliveira da Silva; Galeazzo, Elisabete ; Peres, Henrique Estanislau Maldonado ; Ramírez Fernandez, Francisco Javier
Source: Microelectronic Technology and Devices SBMicro 2003. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO 2003, São Paulo /. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
DANTAS, Michel Oliveira da Silva et al. Electrochemical process for silicon tips fabrication. Microelectronic Technology and Devices SBMicro 2003. Tradução . Pennington: Electrochemical Society, 2003. . . Acesso em: 18 nov. 2024.
APA
Dantas, M. O. da S., Galeazzo, E., Peres, H. E. M., & Ramírez Fernandez, F. J. (2003). Electrochemical process for silicon tips fabrication. In Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society.
NLM
Dantas MO da S, Galeazzo E, Peres HEM, Ramírez Fernandez FJ. Electrochemical process for silicon tips fabrication. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2024 nov. 18 ]
Vancouver
Dantas MO da S, Galeazzo E, Peres HEM, Ramírez Fernandez FJ. Electrochemical process for silicon tips fabrication. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2024 nov. 18 ]
Parte de monografia/livro
Integrated thermopiles for infrared sensing (2003)
Mendes, Wanderson Rodrigues; Peres, Henrique Estanislau Maldonado ; Ramírez Fernandez, Francisco Javier
Source: Microelectronic Technology and Devices SBMicro 2003. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
MENDES, Wanderson Rodrigues e PERES, Henrique Estanislau Maldonado e RAMÍREZ FERNANDEZ, Francisco Javier. Integrated thermopiles for infrared sensing. Microelectronic Technology and Devices SBMicro 2003. Tradução . Pennington: Electrochemical Society, 2003. . . Acesso em: 18 nov. 2024.
APA
Mendes, W. R., Peres, H. E. M., & Ramírez Fernandez, F. J. (2003). Integrated thermopiles for infrared sensing. In Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society.
NLM
Mendes WR, Peres HEM, Ramírez Fernandez FJ. Integrated thermopiles for infrared sensing. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2024 nov. 18 ]
Vancouver
Mendes WR, Peres HEM, Ramírez Fernandez FJ. Integrated thermopiles for infrared sensing. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2024 nov. 18 ]
Trabalho de evento-anais periodico
Hybrid phase and amplitude modulation proximity printing mask fabricated on DLC and 'SIO IND. 2' substrates (2003)
Gonçalves Neto, Luiz; Cirino, Giuseppe Antonio; Mansano, Ronaldo Domingues ; Cardona, Patricia Soares Pinto; Verdonck, Patrick Bernard
Source: Proceedings of SPIE. Conference titles: Micromachining Technology for Micro-Optics and Nano-Optics. Unidades: EESC, EP
Subjects: ÓPTICA ELETRÔNICA, MICROELETRÔNICA
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ABNT
GONÇALVES NETO, Luiz et al. Hybrid phase and amplitude modulation proximity printing mask fabricated on DLC and 'SIO IND. 2' substrates. Proceedings of SPIE. Bellingham: Escola de Engenharia de São Carlos, Universidade de São Paulo. . Acesso em: 18 nov. 2024. , 2003
APA
Gonçalves Neto, L., Cirino, G. A., Mansano, R. D., Cardona, P. S. P., & Verdonck, P. B. (2003). Hybrid phase and amplitude modulation proximity printing mask fabricated on DLC and 'SIO IND. 2' substrates. Proceedings of SPIE. Bellingham: Escola de Engenharia de São Carlos, Universidade de São Paulo.
NLM
Gonçalves Neto L, Cirino GA, Mansano RD, Cardona PSP, Verdonck PB. Hybrid phase and amplitude modulation proximity printing mask fabricated on DLC and 'SIO IND. 2' substrates. Proceedings of SPIE. 2003 ; 4984 18-28.[citado 2024 nov. 18 ]
Vancouver
Gonçalves Neto L, Cirino GA, Mansano RD, Cardona PSP, Verdonck PB. Hybrid phase and amplitude modulation proximity printing mask fabricated on DLC and 'SIO IND. 2' substrates. Proceedings of SPIE. 2003 ; 4984 18-28.[citado 2024 nov. 18 ]
Parte de monografia/livro
Analysis of HALO implant influence on the self-heating and self-heating enhanced impact ionization on 0.13 Mm floating-body partially-depleted SOI MOSFET at low temperature (2003)
Pavanello, Marcelo Antonio ; Martino, João Antonio ; Simoen, Eddy ; Mercha, A.; Claeys, Cor ; Van Meer, H.; De Meyer, K.
Source: Silicon-on-Insulator Technology and Devices XI.. Conference titles: International Symposium on SOI Technology and Devices. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PAVANELLO, Marcelo Antonio et al. Analysis of HALO implant influence on the self-heating and self-heating enhanced impact ionization on 0.13 Mm floating-body partially-depleted SOI MOSFET at low temperature. Silicon-on-Insulator Technology and Devices XI. Tradução . Pennington: The Electrochemical Society, 2003. . . Acesso em: 18 nov. 2024.
APA
Pavanello, M. A., Martino, J. A., Simoen, E., Mercha, A., Claeys, C., Van Meer, H., & De Meyer, K. (2003). Analysis of HALO implant influence on the self-heating and self-heating enhanced impact ionization on 0.13 Mm floating-body partially-depleted SOI MOSFET at low temperature. In Silicon-on-Insulator Technology and Devices XI.. Pennington: The Electrochemical Society.
NLM
Pavanello MA, Martino JA, Simoen E, Mercha A, Claeys C, Van Meer H, De Meyer K. Analysis of HALO implant influence on the self-heating and self-heating enhanced impact ionization on 0.13 Mm floating-body partially-depleted SOI MOSFET at low temperature. In: Silicon-on-Insulator Technology and Devices XI. Pennington: The Electrochemical Society; 2003. [citado 2024 nov. 18 ]
Vancouver
Pavanello MA, Martino JA, Simoen E, Mercha A, Claeys C, Van Meer H, De Meyer K. Analysis of HALO implant influence on the self-heating and self-heating enhanced impact ionization on 0.13 Mm floating-body partially-depleted SOI MOSFET at low temperature. In: Silicon-on-Insulator Technology and Devices XI. Pennington: The Electrochemical Society; 2003. [citado 2024 nov. 18 ]

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