A simple model for a new SOI MOSFET with asymmetric trapezoidal gate (2003)
- Authors:
- Autor USP: MARTINO, JOAO ANTONIO - EP
- Unidade: EP
- Assunto: MICROELETRÔNICA
- Language: Inglês
- Imprenta:
- Source:
- Título: Proceedings
- Conference titles: Workshop IBERSHIP
-
ABNT
GIACOMINI, Renato Camargo e MARTINO, João Antonio. A simple model for a new SOI MOSFET with asymmetric trapezoidal gate. 2003, Anais.. Havana: Escola Politécnica, Universidade de São Paulo, 2003. . Acesso em: 20 jan. 2026. -
APA
Giacomini, R. C., & Martino, J. A. (2003). A simple model for a new SOI MOSFET with asymmetric trapezoidal gate. In Proceedings. Havana: Escola Politécnica, Universidade de São Paulo. -
NLM
Giacomini RC, Martino JA. A simple model for a new SOI MOSFET with asymmetric trapezoidal gate. Proceedings. 2003 ;[citado 2026 jan. 20 ] -
Vancouver
Giacomini RC, Martino JA. A simple model for a new SOI MOSFET with asymmetric trapezoidal gate. Proceedings. 2003 ;[citado 2026 jan. 20 ] - Analog performance and application of graded-channel fully depleted SOI MOSFETs
- Graded-channel fully depleted silicon-on-insulator nMOSFET for reducing the parasitic bipolar effects
- Projeto de processos de fabricação avançados aplicáveis nas tecnologias CMOS micrométricas
- Simple method to determine the poly gate doping concentration based on poly depletion effect
- A new technique to extract the oxide charge density at front and back interfaces of SOI nMOSFETs devices
- Influence of the gate oxide tunneling effect on the extraction of the silicon film and front oxide thickness in SOI nMOSFET
- A study of total series resistance and effective channel length comparing SOI nMOSFET and GC SOI nMOSFET in saturation region
- A simple method to model nonrectangular-gate layout in SOI MOSFETs
- New leakage drain current model for high temperature soi mesfet
- Influence of the substrate potential drop on fully depleted soi mesfet threshold voltage at 77k
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