Influence of the substrate potential drop on fully depleted soi mesfet threshold voltage at 77k (1995)
- Authors:
- Autor USP: MARTINO, JOAO ANTONIO - EP
- Unidade: EP
- Assunto: CIRCUITOS INTEGRADOS
- Language: Inglês
- Imprenta:
- Publisher: Instituto de Informatica da Ufrgs
- Publisher place: Porto Alegre
- Date published: 1995
- Source:
- Título do periódico: Proceedings
- Conference titles: Congress of the Brazilian Microelectronics Society
-
ABNT
PAVANELLO, Marcelo Antonio e MARTINO, João Antonio. Influence of the substrate potential drop on fully depleted soi mesfet threshold voltage at 77k. 1995, Anais.. Porto Alegre: Instituto de Informatica da Ufrgs, 1995. . Acesso em: 19 set. 2024. -
APA
Pavanello, M. A., & Martino, J. A. (1995). Influence of the substrate potential drop on fully depleted soi mesfet threshold voltage at 77k. In Proceedings. Porto Alegre: Instituto de Informatica da Ufrgs. -
NLM
Pavanello MA, Martino JA. Influence of the substrate potential drop on fully depleted soi mesfet threshold voltage at 77k. Proceedings. 1995 ;[citado 2024 set. 19 ] -
Vancouver
Pavanello MA, Martino JA. Influence of the substrate potential drop on fully depleted soi mesfet threshold voltage at 77k. Proceedings. 1995 ;[citado 2024 set. 19 ] - Temperature influences on the drain leakage current behavior in graded-channel SOI nMOSFETs
- Projeto de processos de fabricação avançados aplicáveis nas tecnologias CMOS micrométricas
- Analysis of the linear kink effect in partially depleted SOI nMOSFETs
- Simple method to extract the length dependent mobility degradation factor at 77 K
- Mobility degradation influence on the SOI MOSFET channel length extraction at 77K
- Low temperature and channel engineering influence on harmonic distortion of soi nmosfets for analog applications
- Analysis of the capacitance vs. voltage in graded channel SOI capacitor
- A simple technique to reduce the influence of the series resistance on the BULK and SOI MOSFET parameter extraction
- Metodo simples para a obtencao da densidade de armadilhas na primeira e segunda interface em soi-mosfet
- Simple method for the determination of the interface trap density at 77k in fully depleted acumulation mode soi mosfets
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