Influence of the gate oxide tunneling effect on the extraction of the silicon film and front oxide thickness in SOI nMOSFET (2005)
- Authors:
- Autor USP: MARTINO, JOAO ANTONIO - EP
- Unidade: EP
- Assunto: MICROELETRÔNICA
- Language: Inglês
- Imprenta:
- Publisher: The Electrochemical Society
- Publisher place: Pennington
- Date published: 2005
- ISBN: 1-56677-426-8
- Source:
- Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO
-
ABNT
PAIOLA, A.G. e NICOLETT, Aparecido Sirley e MARTINO, João Antonio. Influence of the gate oxide tunneling effect on the extraction of the silicon film and front oxide thickness in SOI nMOSFET. 2005, Anais.. Pennington: The Electrochemical Society, 2005. . Acesso em: 20 jan. 2026. -
APA
Paiola, A. G., Nicolett, A. S., & Martino, J. A. (2005). Influence of the gate oxide tunneling effect on the extraction of the silicon film and front oxide thickness in SOI nMOSFET. In Microelectronics Technology and Devices SBMICRO 2005. Pennington: The Electrochemical Society. -
NLM
Paiola AG, Nicolett AS, Martino JA. Influence of the gate oxide tunneling effect on the extraction of the silicon film and front oxide thickness in SOI nMOSFET. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2026 jan. 20 ] -
Vancouver
Paiola AG, Nicolett AS, Martino JA. Influence of the gate oxide tunneling effect on the extraction of the silicon film and front oxide thickness in SOI nMOSFET. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2026 jan. 20 ] - Analog performance and application of graded-channel fully depleted SOI MOSFETs
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