A new technique to extract the oxide charge density at front and back interfaces of SOI nMOSFETs devices (2001)
- Authors:
- Autor USP: MARTINO, JOÃO ANTONIO - EP
- Unidade: EP
- Assunto: CIRCUITOS INTEGRADOS
- Language: Inglês
- Imprenta:
- Source:
- Título: SBMicro 2001: proceedings
- Conference titles: International Conference on Microelectronics and Packaging
-
ABNT
NICOLETT, Aparecido Sirley et al. A new technique to extract the oxide charge density at front and back interfaces of SOI nMOSFETs devices. 2001, Anais.. Brasília: SBMicro, 2001. . Acesso em: 20 jan. 2026. -
APA
Nicolett, A. S., Martino, J. A., Simoen, E., & Claeys, C. (2001). A new technique to extract the oxide charge density at front and back interfaces of SOI nMOSFETs devices. In SBMicro 2001: proceedings. Brasília: SBMicro. -
NLM
Nicolett AS, Martino JA, Simoen E, Claeys C. A new technique to extract the oxide charge density at front and back interfaces of SOI nMOSFETs devices. SBMicro 2001: proceedings. 2001 ;[citado 2026 jan. 20 ] -
Vancouver
Nicolett AS, Martino JA, Simoen E, Claeys C. A new technique to extract the oxide charge density at front and back interfaces of SOI nMOSFETs devices. SBMicro 2001: proceedings. 2001 ;[citado 2026 jan. 20 ] - Analog performance and application of graded-channel fully depleted SOI MOSFETs
- Graded-channel fully depleted silicon-on-insulator nMOSFET for reducing the parasitic bipolar effects
- Projeto de processos de fabricação avançados aplicáveis nas tecnologias CMOS micrométricas
- Simple method to determine the poly gate doping concentration based on poly depletion effect
- Influence of the gate oxide tunneling effect on the extraction of the silicon film and front oxide thickness in SOI nMOSFET
- A study of total series resistance and effective channel length comparing SOI nMOSFET and GC SOI nMOSFET in saturation region
- A simple method to model nonrectangular-gate layout in SOI MOSFETs
- New leakage drain current model for high temperature soi mesfet
- Influence of the substrate potential drop on fully depleted soi mesfet threshold voltage at 77k
- A simple model for a new SOI MOSFET with asymmetric trapezoidal gate
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