A simple method to model nonrectangular-gate layout in SOI MOSFETs (2005)
- Authors:
- Autor USP: MARTINO, JOAO ANTONIO - EP
- Unidade: EP
- Assunto: MICROELETRÔNICA
- Language: Inglês
- Imprenta:
- Publisher: The Electrochemical Society
- Publisher place: Pennington
- Date published: 2005
- ISBN: 1-56677-426-8
- Source:
- Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO
-
ABNT
GIACOMINI, Renato Camargo e MARTINO, João Antonio. A simple method to model nonrectangular-gate layout in SOI MOSFETs. 2005, Anais.. Pennington: The Electrochemical Society, 2005. . Acesso em: 12 set. 2025. -
APA
Giacomini, R. C., & Martino, J. A. (2005). A simple method to model nonrectangular-gate layout in SOI MOSFETs. In Microelectronics Technology and Devices SBMICRO 2005. Pennington: The Electrochemical Society. -
NLM
Giacomini RC, Martino JA. A simple method to model nonrectangular-gate layout in SOI MOSFETs. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2025 set. 12 ] -
Vancouver
Giacomini RC, Martino JA. A simple method to model nonrectangular-gate layout in SOI MOSFETs. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2025 set. 12 ] - Obtenção da estrutura de perfil de um transistor MOS a partir de parâmetros PSPICE
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- CPU didática. (também em CD-Rom)
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- Método simples para obtenção de variação da carga efetiva no óxido de um SOI-MOSFET em função da radiação. (em CD-Rom)
- Improved channel lenght and series resistance extraction for short-channel MOSFETs suffering from mobility degradation
- A new method for determination of the fixed charge density at the buried oxide/underlying substrate interface in accumulation-mode P-channel SOI MOSFETs. (em CD-Rom)
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- A simple method for minimizing the transient effect in SOI nMOSFETs at low temperature
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