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Artigo de periodico
Voltage-dependent mobility characterization of MDMO-PPV thin-film transistors for flexible sensor applications (2010)
Cavallari, Marco Roberto ; Albertin, Katia Franklin ; Santos, Gerson dos; Ramos, Carlos Alberto Santos; Pereyra, Inés ; Fonseca, Fernando Josepetti ; Andrade, Adnei Melges de
Source: Microelectronics Technology and Devices - SBMicro 2010. Unidades: EP, IEE
Assunto: ELETROQUÍMICA
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ABNT
CAVALLARI, Marco Roberto et al. Voltage-dependent mobility characterization of MDMO-PPV thin-film transistors for flexible sensor applications. Microelectronics Technology and Devices - SBMicro 2010, v. 31, n. 1, p. 425-432, 2010Tradução . . Disponível em: https://doi.org/10.1149/1.3474188. Acesso em: 06 nov. 2024.
APA
Cavallari, M. R., Albertin, K. F., Santos, G. dos, Ramos, C. A. S., Pereyra, I., Fonseca, F. J., & Andrade, A. M. de. (2010). Voltage-dependent mobility characterization of MDMO-PPV thin-film transistors for flexible sensor applications. Microelectronics Technology and Devices - SBMicro 2010, 31( 1), 425-432. doi:10.1149/1.3474188
NLM
Cavallari MR, Albertin KF, Santos G dos, Ramos CAS, Pereyra I, Fonseca FJ, Andrade AM de. Voltage-dependent mobility characterization of MDMO-PPV thin-film transistors for flexible sensor applications [Internet]. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 425-432.[citado 2024 nov. 06 ] Available from: https://doi.org/10.1149/1.3474188
Vancouver
Cavallari MR, Albertin KF, Santos G dos, Ramos CAS, Pereyra I, Fonseca FJ, Andrade AM de. Voltage-dependent mobility characterization of MDMO-PPV thin-film transistors for flexible sensor applications [Internet]. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 425-432.[citado 2024 nov. 06 ] Available from: https://doi.org/10.1149/1.3474188
Artigo de periodico
a-Si:H thin films deposited at low temperature by sputtering (2010)
Nunes, Carolina Carvalho Previdi; Zambom, Luís da Silva ; Mansano, Ronaldo Domingues
Source: Microelectronics Technology and Devices - SBMicro 2010. Unidade: EP
Assunto: ELETROQUÍMICA
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NUNES, Carolina Carvalho Previdi e ZAMBOM, Luís da Silva e MANSANO, Ronaldo Domingues. a-Si:H thin films deposited at low temperature by sputtering. Microelectronics Technology and Devices - SBMicro 2010, v. 31, n. 1, p. 135-142, 2010Tradução . . Disponível em: https://doi.org/10.1149/1.3474151. Acesso em: 06 nov. 2024.
APA
Nunes, C. C. P., Zambom, L. da S., & Mansano, R. D. (2010). a-Si:H thin films deposited at low temperature by sputtering. Microelectronics Technology and Devices - SBMicro 2010, 31( 1), 135-142. doi:10.1149/1.3474151
NLM
Nunes CCP, Zambom L da S, Mansano RD. a-Si:H thin films deposited at low temperature by sputtering [Internet]. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 135-142.[citado 2024 nov. 06 ] Available from: https://doi.org/10.1149/1.3474151
Vancouver
Nunes CCP, Zambom L da S, Mansano RD. a-Si:H thin films deposited at low temperature by sputtering [Internet]. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 135-142.[citado 2024 nov. 06 ] Available from: https://doi.org/10.1149/1.3474151
Artigo de periodico
Analog performance of bulk and DTMOS triple-gate devices (2010)
Caño de Andrade, Maria Glória ; Martino, João Antonio
Source: Microelectronics Technology and Devices - SBMicro 2010. Unidade: EP
Subjects: TRANSISTORES, SEMICONDUTORES
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CAÑO DE ANDRADE, Maria Glória e MARTINO, João Antonio. Analog performance of bulk and DTMOS triple-gate devices. Microelectronics Technology and Devices - SBMicro 2010, v. 31, n. 1, p. 67-74, 2010Tradução . . Disponível em: https://doi.org/10.1149/1.3474143. Acesso em: 06 nov. 2024.
APA
Caño de Andrade, M. G., & Martino, J. A. (2010). Analog performance of bulk and DTMOS triple-gate devices. Microelectronics Technology and Devices - SBMicro 2010, 31( 1), 67-74. doi:10.1149/1.3474143
NLM
Caño de Andrade MG, Martino JA. Analog performance of bulk and DTMOS triple-gate devices [Internet]. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 67-74.[citado 2024 nov. 06 ] Available from: https://doi.org/10.1149/1.3474143
Vancouver
Caño de Andrade MG, Martino JA. Analog performance of bulk and DTMOS triple-gate devices [Internet]. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 67-74.[citado 2024 nov. 06 ] Available from: https://doi.org/10.1149/1.3474143
Artigo de periodico
A multi-process microfabrication simulator based on cellular automata (2010)
Colombo, Fábio Belotti; Páez Carreño, Marcelo Nelson
Source: Microelectronics Technology and Devices - SBMicro 2010. Unidade: EP
Subjects: ELETROQUÍMICA, SIMULAÇÃO DE SISTEMAS
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COLOMBO, Fábio Belotti e PÁEZ CARREÑO, Marcelo Nelson. A multi-process microfabrication simulator based on cellular automata. Microelectronics Technology and Devices - SBMicro 2010, v. 31, n. 1, p. 101-108, 2010Tradução . . Disponível em: https://doi.org/10.1149/1.3474147. Acesso em: 06 nov. 2024.
APA
Colombo, F. B., & Páez Carreño, M. N. (2010). A multi-process microfabrication simulator based on cellular automata. Microelectronics Technology and Devices - SBMicro 2010, 31( 1), 101-108. doi:10.1149/1.3474147
NLM
Colombo FB, Páez Carreño MN. A multi-process microfabrication simulator based on cellular automata [Internet]. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 101-108.[citado 2024 nov. 06 ] Available from: https://doi.org/10.1149/1.3474147
Vancouver
Colombo FB, Páez Carreño MN. A multi-process microfabrication simulator based on cellular automata [Internet]. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 101-108.[citado 2024 nov. 06 ] Available from: https://doi.org/10.1149/1.3474147
Artigo de periodico
DIBL behavior of triple gate FinFETs with SEG on biaxial strained devices (2010)
Santos, Sara Dereste dos ; Nicoletti, Talitha; Martino, João Antonio ; Simoen, Eddy ; Claeys, Cor
Source: Microelectronics Technology and Devices - SBMicro 2010. Unidade: EP
Assunto: DISPOSITIVOS ELETRÔNICOS
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SANTOS, Sara Dereste dos et al. DIBL behavior of triple gate FinFETs with SEG on biaxial strained devices. Microelectronics Technology and Devices - SBMicro 2010, v. 31, n. 1, p. 51-58, 2010Tradução . . Disponível em: https://doi.org/10.1149/1.3474141. Acesso em: 06 nov. 2024.
APA
Santos, S. D. dos, Nicoletti, T., Martino, J. A., Simoen, E., & Claeys, C. (2010). DIBL behavior of triple gate FinFETs with SEG on biaxial strained devices. Microelectronics Technology and Devices - SBMicro 2010, 31( 1), 51-58. doi:10.1149/1.3474141
NLM
Santos SD dos, Nicoletti T, Martino JA, Simoen E, Claeys C. DIBL behavior of triple gate FinFETs with SEG on biaxial strained devices [Internet]. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 51-58.[citado 2024 nov. 06 ] Available from: https://doi.org/10.1149/1.3474141
Vancouver
Santos SD dos, Nicoletti T, Martino JA, Simoen E, Claeys C. DIBL behavior of triple gate FinFETs with SEG on biaxial strained devices [Internet]. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 51-58.[citado 2024 nov. 06 ] Available from: https://doi.org/10.1149/1.3474141
Artigo de periodico
Microfluidic systems in PDMS for study of foraging abilities of marine microorganisms (2010)
Mielli, Murilo Zubioli; Baldasso, Luis Fabiano; Lopes, Rubens Mendes ; Páez Carreño, Marcelo Nelson
Source: Microelectronics Technology and Devices - SBMicro 2010. Unidades: EP, IO
Assunto: ELETROQUÍMICA
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ABNT
MIELLI, Murilo Zubioli et al. Microfluidic systems in PDMS for study of foraging abilities of marine microorganisms. Microelectronics Technology and Devices - SBMicro 2010, v. 31, n. 1, p. 449-455, 2010Tradução . . Disponível em: https://doi.org/10.1149/1.3474191. Acesso em: 06 nov. 2024.
APA
Mielli, M. Z., Baldasso, L. F., Lopes, R. M., & Páez Carreño, M. N. (2010). Microfluidic systems in PDMS for study of foraging abilities of marine microorganisms. Microelectronics Technology and Devices - SBMicro 2010, 31( 1), 449-455. doi:10.1149/1.3474191
NLM
Mielli MZ, Baldasso LF, Lopes RM, Páez Carreño MN. Microfluidic systems in PDMS for study of foraging abilities of marine microorganisms [Internet]. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 449-455.[citado 2024 nov. 06 ] Available from: https://doi.org/10.1149/1.3474191
Vancouver
Mielli MZ, Baldasso LF, Lopes RM, Páez Carreño MN. Microfluidic systems in PDMS for study of foraging abilities of marine microorganisms [Internet]. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 449-455.[citado 2024 nov. 06 ] Available from: https://doi.org/10.1149/1.3474191
Artigo de periodico
Analog parameters of strained non-rectangular triplegate FinFETs (2010)
Bühler, Rudolf Theoderich; Giacomini, R.; Martino, João Antonio
Source: Microelectronics Technology and Devices - SBMicro 2010. Unidade: EP
Assunto: SIMULAÇÃO DE SISTEMAS
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ABNT
BÜHLER, Rudolf Theoderich e GIACOMINI, R. e MARTINO, João Antonio. Analog parameters of strained non-rectangular triplegate FinFETs. Microelectronics Technology and Devices - SBMicro 2010, v. 31, n. 1, p. 21-28, 2010Tradução . . Disponível em: https://doi.org/10.1149/1.3474138. Acesso em: 06 nov. 2024.
APA
Bühler, R. T., Giacomini, R., & Martino, J. A. (2010). Analog parameters of strained non-rectangular triplegate FinFETs. Microelectronics Technology and Devices - SBMicro 2010, 31( 1), 21-28. doi:10.1149/1.3474138
NLM
Bühler RT, Giacomini R, Martino JA. Analog parameters of strained non-rectangular triplegate FinFETs [Internet]. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 21-28.[citado 2024 nov. 06 ] Available from: https://doi.org/10.1149/1.3474138
Vancouver
Bühler RT, Giacomini R, Martino JA. Analog parameters of strained non-rectangular triplegate FinFETs [Internet]. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 21-28.[citado 2024 nov. 06 ] Available from: https://doi.org/10.1149/1.3474138
Artigo de periodico
Improved analytical model for ZTC bias point for strained Tri-gates FinFETs (2010)
Almeida, Luciano Mendes; Martino, João Antonio ; Simoen, Eddy ; Claeys, Cor
Source: Microelectronics Technology and Devices - SBMicro 2010. Unidade: EP
Assunto: ELETROQUÍMICA
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ALMEIDA, Luciano Mendes et al. Improved analytical model for ZTC bias point for strained Tri-gates FinFETs. Microelectronics Technology and Devices - SBMicro 2010, v. 31, n. 1, p. 385-392, 2010Tradução . . Disponível em: https://doi.org/10.1149/1.3474183. Acesso em: 06 nov. 2024.
APA
Almeida, L. M., Martino, J. A., Simoen, E., & Claeys, C. (2010). Improved analytical model for ZTC bias point for strained Tri-gates FinFETs. Microelectronics Technology and Devices - SBMicro 2010, 31( 1), 385-392. doi:10.1149/1.3474183
NLM
Almeida LM, Martino JA, Simoen E, Claeys C. Improved analytical model for ZTC bias point for strained Tri-gates FinFETs [Internet]. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 385-392.[citado 2024 nov. 06 ] Available from: https://doi.org/10.1149/1.3474183
Vancouver
Almeida LM, Martino JA, Simoen E, Claeys C. Improved analytical model for ZTC bias point for strained Tri-gates FinFETs [Internet]. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 385-392.[citado 2024 nov. 06 ] Available from: https://doi.org/10.1149/1.3474183
Artigo de periodico
Three color upconversion luminescence of Er3+/Yb3+/Tm3+ doped tellurite glass for display applications (2010)
Amâncio, Carlos Taveira; Assumpção, Thiago Alexandre Alves de ; Kassab, Luciana Reyes Pires
Source: Microelectronics Technology and Devices - SBMicro 2010. Unidade: EP
Assunto: ÓPTICA ELETRÔNICA
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AMÂNCIO, Carlos Taveira e ASSUMPÇÃO, Thiago Alexandre Alves de e KASSAB, Luciana Reyes Pires. Three color upconversion luminescence of Er3+/Yb3+/Tm3+ doped tellurite glass for display applications. Microelectronics Technology and Devices - SBMicro 2010, v. 31, n. 1, p. 237-242, 2010Tradução . . Disponível em: https://doi.org/10.1149/1.3474165. Acesso em: 06 nov. 2024.
APA
Amâncio, C. T., Assumpção, T. A. A. de, & Kassab, L. R. P. (2010). Three color upconversion luminescence of Er3+/Yb3+/Tm3+ doped tellurite glass for display applications. Microelectronics Technology and Devices - SBMicro 2010, 31( 1), 237-242. doi:10.1149/1.3474165
NLM
Amâncio CT, Assumpção TAA de, Kassab LRP. Three color upconversion luminescence of Er3+/Yb3+/Tm3+ doped tellurite glass for display applications [Internet]. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 237-242.[citado 2024 nov. 06 ] Available from: https://doi.org/10.1149/1.3474165
Vancouver
Amâncio CT, Assumpção TAA de, Kassab LRP. Three color upconversion luminescence of Er3+/Yb3+/Tm3+ doped tellurite glass for display applications [Internet]. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 237-242.[citado 2024 nov. 06 ] Available from: https://doi.org/10.1149/1.3474165
Artigo de periodico
Nickel salt effect on macroporus silicon immersed in fluoride solution: from silicon microtubes to nickel microtubes (2010)
Huanca, Danilo Roque ; Kim, Hae Yong ; Elias, Vinícius F; Salcedo, Walter Jaimes
Source: Microelectronics Technology and Devices - SBMicro 2010. Unidade: EP
Subjects: ELETROQUÍMICA, SILÍCIO
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ABNT
HUANCA, Danilo Roque et al. Nickel salt effect on macroporus silicon immersed in fluoride solution: from silicon microtubes to nickel microtubes. Microelectronics Technology and Devices - SBMicro 2010, v. 31, n. 1, p. 295-303, 2010Tradução . . Acesso em: 06 nov. 2024.
APA
Huanca, D. R., Kim, H. Y., Elias, V. F., & Salcedo, W. J. (2010). Nickel salt effect on macroporus silicon immersed in fluoride solution: from silicon microtubes to nickel microtubes. Microelectronics Technology and Devices - SBMicro 2010, 31( 1), 295-303.
NLM
Huanca DR, Kim HY, Elias VF, Salcedo WJ. Nickel salt effect on macroporus silicon immersed in fluoride solution: from silicon microtubes to nickel microtubes. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 295-303.[citado 2024 nov. 06 ]
Vancouver
Huanca DR, Kim HY, Elias VF, Salcedo WJ. Nickel salt effect on macroporus silicon immersed in fluoride solution: from silicon microtubes to nickel microtubes. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 295-303.[citado 2024 nov. 06 ]
Artigo de periodico
Nano-crystalline palladium-film catalysts deposited by e-beam evaporation aiming hydrogen sensing (2010)
Stem, Nair; Santos Filho, Sebastião Gomes dos
Source: Microelectronics Technology and Devices - SBMicro 2010. Unidade: EP
Subjects: ELEMENTOS DE TRANSIÇÃO, SEMICONDUTORES
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STEM, Nair e SANTOS FILHO, Sebastião Gomes dos. Nano-crystalline palladium-film catalysts deposited by e-beam evaporation aiming hydrogen sensing. Microelectronics Technology and Devices - SBMicro 2010, v. 31, n. 1, p. 171-178, 2010Tradução . . Disponível em: https://doi.org/10.1149/1.3474156. Acesso em: 06 nov. 2024.
APA
Stem, N., & Santos Filho, S. G. dos. (2010). Nano-crystalline palladium-film catalysts deposited by e-beam evaporation aiming hydrogen sensing. Microelectronics Technology and Devices - SBMicro 2010, 31( 1), 171-178. doi:10.1149/1.3474156
NLM
Stem N, Santos Filho SG dos. Nano-crystalline palladium-film catalysts deposited by e-beam evaporation aiming hydrogen sensing [Internet]. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 171-178.[citado 2024 nov. 06 ] Available from: https://doi.org/10.1149/1.3474156
Vancouver
Stem N, Santos Filho SG dos. Nano-crystalline palladium-film catalysts deposited by e-beam evaporation aiming hydrogen sensing [Internet]. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 171-178.[citado 2024 nov. 06 ] Available from: https://doi.org/10.1149/1.3474156
Artigo de periodico
Thickness dependence of indium-tin oxide thin films deposited by RF magnetron sputtering (2010)
Damiani, Larissa Rodrigues; Mansano, Ronaldo Domingues
Source: Microelectronics Technology and Devices - SBMicro 2010. Unidade: EP
Assunto: ELETROQUÍMICA
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DAMIANI, Larissa Rodrigues e MANSANO, Ronaldo Domingues. Thickness dependence of indium-tin oxide thin films deposited by RF magnetron sputtering. Microelectronics Technology and Devices - SBMicro 2010, v. 31, n. 1, p. 117-124, 2010Tradução . . Disponível em: https://doi.org/10.1149/1.3474149. Acesso em: 06 nov. 2024.
APA
Damiani, L. R., & Mansano, R. D. (2010). Thickness dependence of indium-tin oxide thin films deposited by RF magnetron sputtering. Microelectronics Technology and Devices - SBMicro 2010, 31( 1), 117-124. doi:10.1149/1.3474149
NLM
Damiani LR, Mansano RD. Thickness dependence of indium-tin oxide thin films deposited by RF magnetron sputtering [Internet]. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 117-124.[citado 2024 nov. 06 ] Available from: https://doi.org/10.1149/1.3474149
Vancouver
Damiani LR, Mansano RD. Thickness dependence of indium-tin oxide thin films deposited by RF magnetron sputtering [Internet]. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 117-124.[citado 2024 nov. 06 ] Available from: https://doi.org/10.1149/1.3474149
Artigo de periodico
Characterization of InN thin films grown by IBAD method (2010)
Sparvoli, Marina; Chubaci, José Fernando Diniz ; Mansano, Ronaldo Domingues
Source: Microelectronics Technology and Devices - SBMicro 2010. Unidades: EP, IF
Subjects: TRANSISTORES, SEMICONDUTORES
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ABNT
SPARVOLI, Marina e CHUBACI, José Fernando Diniz e MANSANO, Ronaldo Domingues. Characterization of InN thin films grown by IBAD method. Microelectronics Technology and Devices - SBMicro 2010, v. 31, n. 1, p. 165-170, 2010Tradução . . Disponível em: https://doi.org/10.1149/1.3474155. Acesso em: 06 nov. 2024.
APA
Sparvoli, M., Chubaci, J. F. D., & Mansano, R. D. (2010). Characterization of InN thin films grown by IBAD method. Microelectronics Technology and Devices - SBMicro 2010, 31( 1), 165-170. doi:10.1149/1.3474155
NLM
Sparvoli M, Chubaci JFD, Mansano RD. Characterization of InN thin films grown by IBAD method [Internet]. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 165-170.[citado 2024 nov. 06 ] Available from: https://doi.org/10.1149/1.3474155
Vancouver
Sparvoli M, Chubaci JFD, Mansano RD. Characterization of InN thin films grown by IBAD method [Internet]. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 165-170.[citado 2024 nov. 06 ] Available from: https://doi.org/10.1149/1.3474155
Artigo de periodico
Fabrication and characterization of Teo2-ZnO rib waveguides (2010)
Cacho, Vanessa Duarte del; Siarkowski, Acácio Luiz; Morimoto, Nilton Itiro ; Borges, Ben-Hur Viana ; Kassab, Luciana Reyes Pires
Source: Microelectronics Technology and Devices - SBMicro 2010. Unidades: EP, EESC
Assunto: ELETROQUÍMICA
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ABNT
CACHO, Vanessa Duarte del et al. Fabrication and characterization of Teo2-ZnO rib waveguides. Microelectronics Technology and Devices - SBMicro 2010, v. 31, n. 1, p. 225-229, 2010Tradução . . Disponível em: https://doi.org/10.1149/1.3474163. Acesso em: 06 nov. 2024.
APA
Cacho, V. D. del, Siarkowski, A. L., Morimoto, N. I., Borges, B. -H. V., & Kassab, L. R. P. (2010). Fabrication and characterization of Teo2-ZnO rib waveguides. Microelectronics Technology and Devices - SBMicro 2010, 31( 1), 225-229. doi:10.1149/1.3474163
NLM
Cacho VD del, Siarkowski AL, Morimoto NI, Borges B-HV, Kassab LRP. Fabrication and characterization of Teo2-ZnO rib waveguides [Internet]. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 225-229.[citado 2024 nov. 06 ] Available from: https://doi.org/10.1149/1.3474163
Vancouver
Cacho VD del, Siarkowski AL, Morimoto NI, Borges B-HV, Kassab LRP. Fabrication and characterization of Teo2-ZnO rib waveguides [Internet]. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 225-229.[citado 2024 nov. 06 ] Available from: https://doi.org/10.1149/1.3474163
Artigo de periodico
The nickel micro-tubes fabrication by galvanic displacement method using macroporous silicon as template (2010)
Huanca, Danilo Roque ; Salcedo, Walter Jaimes
Source: Microelectronics Technology and Devices - SBMicro 2010. Unidade: EP
Subjects: ELETROQUÍMICA, NÍQUEL
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ABNT
HUANCA, Danilo Roque e SALCEDO, Walter Jaimes. The nickel micro-tubes fabrication by galvanic displacement method using macroporous silicon as template. Microelectronics Technology and Devices - SBMicro 2010, v. 31, n. 1, p. 179-187, 2010Tradução . . Disponível em: https://doi.org/10.1149/1.3474157. Acesso em: 06 nov. 2024.
APA
Huanca, D. R., & Salcedo, W. J. (2010). The nickel micro-tubes fabrication by galvanic displacement method using macroporous silicon as template. Microelectronics Technology and Devices - SBMicro 2010, 31( 1), 179-187. doi:10.1149/1.3474157
NLM
Huanca DR, Salcedo WJ. The nickel micro-tubes fabrication by galvanic displacement method using macroporous silicon as template [Internet]. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 179-187.[citado 2024 nov. 06 ] Available from: https://doi.org/10.1149/1.3474157
Vancouver
Huanca DR, Salcedo WJ. The nickel micro-tubes fabrication by galvanic displacement method using macroporous silicon as template [Internet]. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 179-187.[citado 2024 nov. 06 ] Available from: https://doi.org/10.1149/1.3474157
Artigo de periodico
A new correlation-based granulometry algorithm with application in characterizing porous silicon nanomaterials (2010)
Maruta, Ricardo Hitoshi; Kim, Hae Yong ; Huanca, Danilo Roque ; Salcedo, Walter Jaimes
Source: Microelectronics Technology and Devices - SBMicro 2010. Unidade: EP
Subjects: GRANULOMETRIA, ALGORITMOS
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MARUTA, Ricardo Hitoshi et al. A new correlation-based granulometry algorithm with application in characterizing porous silicon nanomaterials. Microelectronics Technology and Devices - SBMicro 2010, v. 31, n. 1, p. 225-229, 2010Tradução . . Disponível em: https://doi.org/10.1149/1.3474170. Acesso em: 06 nov. 2024.
APA
Maruta, R. H., Kim, H. Y., Huanca, D. R., & Salcedo, W. J. (2010). A new correlation-based granulometry algorithm with application in characterizing porous silicon nanomaterials. Microelectronics Technology and Devices - SBMicro 2010, 31( 1), 225-229. doi:10.1149/1.3474170
NLM
Maruta RH, Kim HY, Huanca DR, Salcedo WJ. A new correlation-based granulometry algorithm with application in characterizing porous silicon nanomaterials [Internet]. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 225-229.[citado 2024 nov. 06 ] Available from: https://doi.org/10.1149/1.3474170
Vancouver
Maruta RH, Kim HY, Huanca DR, Salcedo WJ. A new correlation-based granulometry algorithm with application in characterizing porous silicon nanomaterials [Internet]. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 225-229.[citado 2024 nov. 06 ] Available from: https://doi.org/10.1149/1.3474170
Artigo de periodico
Carbon-modified titanium dioxide deposited by e-beam aiming hydrogen sensing (2010)
Stem, Nair; Santos Filho, Sebastião Gomes dos
Source: Microelectronics Technology and Devices - SBMicro 2010. Unidade: EP
Assunto: ELETROQUÍMICA
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ABNT
STEM, Nair e SANTOS FILHO, Sebastião Gomes dos. Carbon-modified titanium dioxide deposited by e-beam aiming hydrogen sensing. Microelectronics Technology and Devices - SBMicro 2010, v. 31, n. 1, p. 433-439, 2010Tradução . . Disponível em: https://doi.org/10.1149/1.3474189. Acesso em: 06 nov. 2024.
APA
Stem, N., & Santos Filho, S. G. dos. (2010). Carbon-modified titanium dioxide deposited by e-beam aiming hydrogen sensing. Microelectronics Technology and Devices - SBMicro 2010, 31( 1), 433-439. doi:10.1149/1.3474189
NLM
Stem N, Santos Filho SG dos. Carbon-modified titanium dioxide deposited by e-beam aiming hydrogen sensing [Internet]. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 433-439.[citado 2024 nov. 06 ] Available from: https://doi.org/10.1149/1.3474189
Vancouver
Stem N, Santos Filho SG dos. Carbon-modified titanium dioxide deposited by e-beam aiming hydrogen sensing [Internet]. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 433-439.[citado 2024 nov. 06 ] Available from: https://doi.org/10.1149/1.3474189
Artigo de periodico
Analog operation and harmonic distortion temperature dependence of nMOS junctionless transistors (2010)
Doria, Rodrigo Trevisoli ; Pavanello, Marcelo Antonio ; Lee, C. W.; Ferain, Isabelle; Akhavan, Nima Dehdashti; Yan, Ran; Razavi, Pedram; Yu, Ran; Kranti, A; Colinge, Jean-Pierre
Source: Microelectronics Technology and Devices - SBMicro 2010. Unidade: EP
Assunto: ELETROQUÍMICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
DORIA, Rodrigo Trevisoli et al. Analog operation and harmonic distortion temperature dependence of nMOS junctionless transistors. Microelectronics Technology and Devices - SBMicro 2010, v. 31, n. 1, p. 13-20, 2010Tradução . . Disponível em: https://doi.org/10.1149/1.3474137. Acesso em: 06 nov. 2024.
APA
Doria, R. T., Pavanello, M. A., Lee, C. W., Ferain, I., Akhavan, N. D., Yan, R., et al. (2010). Analog operation and harmonic distortion temperature dependence of nMOS junctionless transistors. Microelectronics Technology and Devices - SBMicro 2010, 31( 1), 13-20. doi:10.1149/1.3474137
NLM
Doria RT, Pavanello MA, Lee CW, Ferain I, Akhavan ND, Yan R, Razavi P, Yu R, Kranti A, Colinge J-P. Analog operation and harmonic distortion temperature dependence of nMOS junctionless transistors [Internet]. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 13-20.[citado 2024 nov. 06 ] Available from: https://doi.org/10.1149/1.3474137
Vancouver
Doria RT, Pavanello MA, Lee CW, Ferain I, Akhavan ND, Yan R, Razavi P, Yu R, Kranti A, Colinge J-P. Analog operation and harmonic distortion temperature dependence of nMOS junctionless transistors [Internet]. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 13-20.[citado 2024 nov. 06 ] Available from: https://doi.org/10.1149/1.3474137
Artigo de periodico
Cross-section features influence on surrounding MuGFETs (2010)
Martino, Márcio Dalla Valle; Agopian, Paula Ghedini Der ; Martino, João Antonio
Source: Microelectronics Technology and Devices - SBMicro 2010. Unidade: EP
Subjects: TRANSISTORES, SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MARTINO, Márcio Dalla Valle e AGOPIAN, Paula Ghedini Der e MARTINO, João Antonio. Cross-section features influence on surrounding MuGFETs. Microelectronics Technology and Devices - SBMicro 2010, v. 31, n. 1, p. 91-98, 2010Tradução . . Disponível em: https://doi.org/10.1149/1.3474146. Acesso em: 06 nov. 2024.
APA
Martino, M. D. V., Agopian, P. G. D., & Martino, J. A. (2010). Cross-section features influence on surrounding MuGFETs. Microelectronics Technology and Devices - SBMicro 2010, 31( 1), 91-98. doi:10.1149/1.3474146
NLM
Martino MDV, Agopian PGD, Martino JA. Cross-section features influence on surrounding MuGFETs [Internet]. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 91-98.[citado 2024 nov. 06 ] Available from: https://doi.org/10.1149/1.3474146
Vancouver
Martino MDV, Agopian PGD, Martino JA. Cross-section features influence on surrounding MuGFETs [Internet]. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 91-98.[citado 2024 nov. 06 ] Available from: https://doi.org/10.1149/1.3474146
Artigo de periodico
Analog performance of SOI nFinFETs with different TiN gate electrode thickness (2010)
Galeti, Milene; Rodrigues, Michele; Collaert, Nadine ; Simoen, Eddy ; Claeys, Cor ; Martino, João Antonio
Source: Microelectronics Technology and Devices - SBMicro 2010. Unidade: EP
Assunto: TRANSISTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GALETI, Milene et al. Analog performance of SOI nFinFETs with different TiN gate electrode thickness. Microelectronics Technology and Devices - SBMicro 2010, v. 31, n. 1, p. 59-65, 2010Tradução . . Disponível em: https://doi.org/10.1149/1.3474142. Acesso em: 06 nov. 2024.
APA
Galeti, M., Rodrigues, M., Collaert, N., Simoen, E., Claeys, C., & Martino, J. A. (2010). Analog performance of SOI nFinFETs with different TiN gate electrode thickness. Microelectronics Technology and Devices - SBMicro 2010, 31( 1), 59-65. doi:10.1149/1.3474142
NLM
Galeti M, Rodrigues M, Collaert N, Simoen E, Claeys C, Martino JA. Analog performance of SOI nFinFETs with different TiN gate electrode thickness [Internet]. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 59-65.[citado 2024 nov. 06 ] Available from: https://doi.org/10.1149/1.3474142
Vancouver
Galeti M, Rodrigues M, Collaert N, Simoen E, Claeys C, Martino JA. Analog performance of SOI nFinFETs with different TiN gate electrode thickness [Internet]. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 59-65.[citado 2024 nov. 06 ] Available from: https://doi.org/10.1149/1.3474142

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