Analog performance of SOI nFinFETs with different TiN gate electrode thickness (2010)
- Authors:
- Autor USP: MARTINO, JOAO ANTONIO - EP
- Unidade: EP
- DOI: 10.1149/1.3474142
- Assunto: TRANSISTORES
- Language: Inglês
- Imprenta:
- Publisher place: New Jersey
- Date published: 2010
- Source:
- Título: Microelectronics Technology and Devices - SBMicro 2010
- ISSN: 1938-5862
- Volume/Número/Paginação/Ano: v.31, n.1, p. 59-65, 2010
- Este periódico é de acesso aberto
- Este artigo NÃO é de acesso aberto
-
ABNT
GALETI, Milene et al. Analog performance of SOI nFinFETs with different TiN gate electrode thickness. Microelectronics Technology and Devices - SBMicro 2010, v. 31, n. 1, p. 59-65, 2010Tradução . . Disponível em: https://doi.org/10.1149/1.3474142. Acesso em: 28 jan. 2026. -
APA
Galeti, M., Rodrigues, M., Collaert, N., Simoen, E., Claeys, C., & Martino, J. A. (2010). Analog performance of SOI nFinFETs with different TiN gate electrode thickness. Microelectronics Technology and Devices - SBMicro 2010, 31( 1), 59-65. doi:10.1149/1.3474142 -
NLM
Galeti M, Rodrigues M, Collaert N, Simoen E, Claeys C, Martino JA. Analog performance of SOI nFinFETs with different TiN gate electrode thickness [Internet]. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 59-65.[citado 2026 jan. 28 ] Available from: https://doi.org/10.1149/1.3474142 -
Vancouver
Galeti M, Rodrigues M, Collaert N, Simoen E, Claeys C, Martino JA. Analog performance of SOI nFinFETs with different TiN gate electrode thickness [Internet]. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 59-65.[citado 2026 jan. 28 ] Available from: https://doi.org/10.1149/1.3474142 - Analog circuit design using graded-channel SOI NMOSFETs
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- Estudo comparativo de estruturas de fonte e dreno de transistores mos submicrometricos
- Comparison between low and high read bias in FB-RAM on UTBOX FDSOI devices
- Effective channel length and series resistence extraction error induced by the substrate in enhancement-mode SOI nMOSFETs
Informações sobre o DOI: 10.1149/1.3474142 (Fonte: oaDOI API)
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