Improved analytical model for ZTC bias point for strained Tri-gates FinFETs (2010)
- Authors:
- USP affiliated authors: MARTINO, JOAO ANTONIO - EP ; ALMEIDA, LUCIANO MENDES - EP
- Unidade: EP
- DOI: 10.1149/1.3474183
- Assunto: ELETROQUÍMICA
- Language: Inglês
- Imprenta:
- Publisher place: New Jersey
- Date published: 2010
- Source:
- Título: Microelectronics Technology and Devices - SBMicro 2010
- ISSN: 1938-5862
- Volume/Número/Paginação/Ano: v.31, n.1, p. 385-392, 2010
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
ALMEIDA, Luciano Mendes et al. Improved analytical model for ZTC bias point for strained Tri-gates FinFETs. Microelectronics Technology and Devices - SBMicro 2010, v. 31, n. 1, p. 385-392, 2010Tradução . . Disponível em: https://doi.org/10.1149/1.3474183. Acesso em: 04 out. 2024. -
APA
Almeida, L. M., Martino, J. A., Simoen, E., & Claeys, C. (2010). Improved analytical model for ZTC bias point for strained Tri-gates FinFETs. Microelectronics Technology and Devices - SBMicro 2010, 31( 1), 385-392. doi:10.1149/1.3474183 -
NLM
Almeida LM, Martino JA, Simoen E, Claeys C. Improved analytical model for ZTC bias point for strained Tri-gates FinFETs [Internet]. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 385-392.[citado 2024 out. 04 ] Available from: https://doi.org/10.1149/1.3474183 -
Vancouver
Almeida LM, Martino JA, Simoen E, Claeys C. Improved analytical model for ZTC bias point for strained Tri-gates FinFETs [Internet]. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 385-392.[citado 2024 out. 04 ] Available from: https://doi.org/10.1149/1.3474183 - Estudo de célula de memória dinâmica de apenas um transistor SOI de óxido enterrado ultrafino
- On the variability of the low-frequency noise in UTBOX SOI nMOSFETs
- Temperature influences on the drain leakage current behavior in graded-channel SOI nMOSFETs
- Projeto de processos de fabricação avançados aplicáveis nas tecnologias CMOS micrométricas
- Analysis of the linear kink effect in partially depleted SOI nMOSFETs
- Simple method to extract the length dependent mobility degradation factor at 77 K
- Mobility degradation influence on the SOI MOSFET channel length extraction at 77K
- Low temperature and channel engineering influence on harmonic distortion of soi nmosfets for analog applications
- Analysis of the capacitance vs. voltage in graded channel SOI capacitor
- A simple technique to reduce the influence of the series resistance on the BULK and SOI MOSFET parameter extraction
Informações sobre o DOI: 10.1149/1.3474183 (Fonte: oaDOI API)
Download do texto completo
Tipo | Nome | Link | |
---|---|---|---|
1964626.pdf |
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas