ReP USP - Resultado da busca

Trabalho de evento
Low frequency noise assessment in advanced UTBOX SOI n-channel MOSFETs (2013)
Martino, João Antonio ; Strobel, V.; Cretu, B.; Santos, Sara Dereste dos; Simoen, Eddy ; Routure, J.-M.; Carin, R.; Aoulaiche, Marc; Claeys, Cor
Source: EUROSOI 2013. Conference titles: European Workshop on Silicon on Insulator Technology, Devices and Circuits. Unidade: EP
Assunto: MICROELETRÔNICA (CONGRESSOS)
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ABNT
MARTINO, João Antonio et al. Low frequency noise assessment in advanced UTBOX SOI n-channel MOSFETs. 2013, Anais.. Paris: Institut Superieur d'Électronique, 2013. . Acesso em: 19 jun. 2024.
APA
Martino, J. A., Strobel, V., Cretu, B., Santos, S. D. dos, Simoen, E., Routure, J. -M., et al. (2013). Low frequency noise assessment in advanced UTBOX SOI n-channel MOSFETs. In EUROSOI 2013. Paris: Institut Superieur d'Électronique.
NLM
Martino JA, Strobel V, Cretu B, Santos SD dos, Simoen E, Routure J-M, Carin R, Aoulaiche M, Claeys C. Low frequency noise assessment in advanced UTBOX SOI n-channel MOSFETs. EUROSOI 2013. 2013 ;[citado 2024 jun. 19 ]
Vancouver
Martino JA, Strobel V, Cretu B, Santos SD dos, Simoen E, Routure J-M, Carin R, Aoulaiche M, Claeys C. Low frequency noise assessment in advanced UTBOX SOI n-channel MOSFETs. EUROSOI 2013. 2013 ;[citado 2024 jun. 19 ]
Trabalho de evento
Influence of interface trap density on vertical NW-TFETs with different source composition (2013)
Martino, João Antonio ; Souza, Felipe Neves; Agopian, Paula Ghedini Der ; Rooyackers, Rita; Vandooren, A.; Simoen, Eddy ; Claeys, Cor
Source: EUROSOI 2013. Conference titles: European Workshop on Silicon on Insulator Technology, Devices and Circuits. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
MARTINO, João Antonio et al. Influence of interface trap density on vertical NW-TFETs with different source composition. 2013, Anais.. Paris: Institut Superieur d'Électronique, 2013. . Acesso em: 19 jun. 2024.
APA
Martino, J. A., Souza, F. N., Agopian, P. G. D., Rooyackers, R., Vandooren, A., Simoen, E., & Claeys, C. (2013). Influence of interface trap density on vertical NW-TFETs with different source composition. In EUROSOI 2013. Paris: Institut Superieur d'Électronique.
NLM
Martino JA, Souza FN, Agopian PGD, Rooyackers R, Vandooren A, Simoen E, Claeys C. Influence of interface trap density on vertical NW-TFETs with different source composition. EUROSOI 2013. 2013 ;[citado 2024 jun. 19 ]
Vancouver
Martino JA, Souza FN, Agopian PGD, Rooyackers R, Vandooren A, Simoen E, Claeys C. Influence of interface trap density on vertical NW-TFETs with different source composition. EUROSOI 2013. 2013 ;[citado 2024 jun. 19 ]
Trabalho de evento
Low-frequency noise for different gate dielectrics on state-of-the-art UTBOX SOI nMOSFETs (2013)
Martino, João Antonio ; Santos, Sara Dereste dos; Simoen, Eddy ; Strobe, V.; Cretu, B.; Routoure, J.-M.; Carin, R.; Aoulaiche, Marc; Veloso, Anabela; Claeys, Cor
Source: EUROSOI 2013. Conference titles: European Workshop on Silicon on Insulator Technology, Devices and Circuits. Unidade: EP
Assunto: MICROELETRÔNICA (CONGRESSOS)
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ABNT
MARTINO, João Antonio et al. Low-frequency noise for different gate dielectrics on state-of-the-art UTBOX SOI nMOSFETs. 2013, Anais.. Paris: Institut Superieur d'Électronique, 2013. . Acesso em: 19 jun. 2024.
APA
Martino, J. A., Santos, S. D. dos, Simoen, E., Strobe, V., Cretu, B., Routoure, J. -M., et al. (2013). Low-frequency noise for different gate dielectrics on state-of-the-art UTBOX SOI nMOSFETs. In EUROSOI 2013. Paris: Institut Superieur d'Électronique.
NLM
Martino JA, Santos SD dos, Simoen E, Strobe V, Cretu B, Routoure J-M, Carin R, Aoulaiche M, Veloso A, Claeys C. Low-frequency noise for different gate dielectrics on state-of-the-art UTBOX SOI nMOSFETs. EUROSOI 2013. 2013 ;[citado 2024 jun. 19 ]
Vancouver
Martino JA, Santos SD dos, Simoen E, Strobe V, Cretu B, Routoure J-M, Carin R, Aoulaiche M, Veloso A, Claeys C. Low-frequency noise for different gate dielectrics on state-of-the-art UTBOX SOI nMOSFETs. EUROSOI 2013. 2013 ;[citado 2024 jun. 19 ]
Trabalho de evento
Experimental comparison between tensile and compressive uniaxially stressed MuGFETs under X-ray radiation (2013)
Martino, João Antonio ; Agopian, Paula Ghedini Der ; Peruzzi, V. V.; Gimenez, Salvador Pinillos ; Silveira, M. A. G.; Simoen, Eddy ; Claeys, Cor
Source: EUROSOI 2013. Conference titles: European Workshop on Silicon on Insulator Technology, Devices and Circuits. Unidade: EP
Assunto: MICROELETRÔNICA (CONGRESSOS)
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ABNT
MARTINO, João Antonio et al. Experimental comparison between tensile and compressive uniaxially stressed MuGFETs under X-ray radiation. 2013, Anais.. Paris: Institut Superieur d'Électronique, 2013. . Acesso em: 19 jun. 2024.
APA
Martino, J. A., Agopian, P. G. D., Peruzzi, V. V., Gimenez, S. P., Silveira, M. A. G., Simoen, E., & Claeys, C. (2013). Experimental comparison between tensile and compressive uniaxially stressed MuGFETs under X-ray radiation. In EUROSOI 2013. Paris: Institut Superieur d'Électronique.
NLM
Martino JA, Agopian PGD, Peruzzi VV, Gimenez SP, Silveira MAG, Simoen E, Claeys C. Experimental comparison between tensile and compressive uniaxially stressed MuGFETs under X-ray radiation. EUROSOI 2013. 2013 ;[citado 2024 jun. 19 ]
Vancouver
Martino JA, Agopian PGD, Peruzzi VV, Gimenez SP, Silveira MAG, Simoen E, Claeys C. Experimental comparison between tensile and compressive uniaxially stressed MuGFETs under X-ray radiation. EUROSOI 2013. 2013 ;[citado 2024 jun. 19 ]
Trabalho de evento
Improvement of Retention Time Using Pulsed Back Gate Bias on UTBOX SOI Memory Cell (2013)
Martino, João Antonio ; Sasaki, Katia Regina Akemi; Nissimoff, Albert; Almeida, Luciano Mendes; Aoulaiche, Marc; Simoen, Eddy ; Claeys, Cor
Source: EUROSOI 2013. Conference titles: European Workshop on Silicon on Insulator Technology, Devices and Circuits. Unidade: EP
Assunto: MICROELETRÔNICA (CONGRESSOS)
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ABNT
MARTINO, João Antonio et al. Improvement of Retention Time Using Pulsed Back Gate Bias on UTBOX SOI Memory Cell. 2013, Anais.. Paris: Institut Superieur d'Électronique, 2013. . Acesso em: 19 jun. 2024.
APA
Martino, J. A., Sasaki, K. R. A., Nissimoff, A., Almeida, L. M., Aoulaiche, M., Simoen, E., & Claeys, C. (2013). Improvement of Retention Time Using Pulsed Back Gate Bias on UTBOX SOI Memory Cell. In EUROSOI 2013. Paris: Institut Superieur d'Électronique.
NLM
Martino JA, Sasaki KRA, Nissimoff A, Almeida LM, Aoulaiche M, Simoen E, Claeys C. Improvement of Retention Time Using Pulsed Back Gate Bias on UTBOX SOI Memory Cell. EUROSOI 2013. 2013 ;[citado 2024 jun. 19 ]
Vancouver
Martino JA, Sasaki KRA, Nissimoff A, Almeida LM, Aoulaiche M, Simoen E, Claeys C. Improvement of Retention Time Using Pulsed Back Gate Bias on UTBOX SOI Memory Cell. EUROSOI 2013. 2013 ;[citado 2024 jun. 19 ]
Trabalho de evento
Experimental and Simulation of 1T-DRAM Trend with the Gate Length on UTBOX Devices (2013)
Martino, João Antonio ; Nicoletti, Talitha; Sasaki, Katia Regina Akemi; Aoulaiche, Marc; Simoen, Eddy ; Claeys, Cor
Source: EUROSOI 2013. Conference titles: European Workshop on Silicon on Insulator Technology, Devices and Circuits. Unidade: EP
Assunto: MICROELETRÔNICA (CONGRESSOS)
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ABNT
MARTINO, João Antonio et al. Experimental and Simulation of 1T-DRAM Trend with the Gate Length on UTBOX Devices. 2013, Anais.. Paris: Institut Superieur d'Électronique, 2013. . Acesso em: 19 jun. 2024.
APA
Martino, J. A., Nicoletti, T., Sasaki, K. R. A., Aoulaiche, M., Simoen, E., & Claeys, C. (2013). Experimental and Simulation of 1T-DRAM Trend with the Gate Length on UTBOX Devices. In EUROSOI 2013. Paris: Institut Superieur d'Électronique.
NLM
Martino JA, Nicoletti T, Sasaki KRA, Aoulaiche M, Simoen E, Claeys C. Experimental and Simulation of 1T-DRAM Trend with the Gate Length on UTBOX Devices. EUROSOI 2013. 2013 ;[citado 2024 jun. 19 ]
Vancouver
Martino JA, Nicoletti T, Sasaki KRA, Aoulaiche M, Simoen E, Claeys C. Experimental and Simulation of 1T-DRAM Trend with the Gate Length on UTBOX Devices. EUROSOI 2013. 2013 ;[citado 2024 jun. 19 ]
Trabalho de evento-anais periodico
Study of the Main Digital and Analog Parameters of Underlapped MuGFETs (2012)
Martino, João Antonio ; Santos, Sara Dereste dos; Nicoletti, Talitha; Aoulaiche, Marc; Simoen, Eddy ; Claeys, Cor
Source: VIII Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits. Conference titles: European Workshop on Silicon on Insulator Technology, Devices and Circuits. Unidade: EP
Assunto: MICROELETRÔNICA (CONGRESSOS)
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ABNT
MARTINO, João Antonio et al. Study of the Main Digital and Analog Parameters of Underlapped MuGFETs. VIII Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits. S.l: Institut d'Électronique. . Acesso em: 19 jun. 2024. , 2012
APA
Martino, J. A., Santos, S. D. dos, Nicoletti, T., Aoulaiche, M., Simoen, E., & Claeys, C. (2012). Study of the Main Digital and Analog Parameters of Underlapped MuGFETs. VIII Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits. S.l: Institut d'Électronique.
NLM
Martino JA, Santos SD dos, Nicoletti T, Aoulaiche M, Simoen E, Claeys C. Study of the Main Digital and Analog Parameters of Underlapped MuGFETs. VIII Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits. 2012 ;[citado 2024 jun. 19 ]
Vancouver
Martino JA, Santos SD dos, Nicoletti T, Aoulaiche M, Simoen E, Claeys C. Study of the Main Digital and Analog Parameters of Underlapped MuGFETs. VIII Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits. 2012 ;[citado 2024 jun. 19 ]
Trabalho de evento
Human asymmetry in multibiometric recognition (2011)
Vertamatti, Rodolfo; Arjona Ramírez, Miguel
Source: Proceedings of CIBIM 2011. Conference titles: IEEE workshop on computational intelligence in biometrics and identity management. Unidade: EP
Assunto: BIOMETRIA
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ABNT
VERTAMATTI, Rodolfo e ARJONA RAMÍREZ, Miguel. Human asymmetry in multibiometric recognition. 2011, Anais.. Paris: Escola Politécnica, Universidade de São Paulo, 2011. . Acesso em: 19 jun. 2024.
APA
Vertamatti, R., & Arjona Ramírez, M. (2011). Human asymmetry in multibiometric recognition. In Proceedings of CIBIM 2011. Paris: Escola Politécnica, Universidade de São Paulo.
NLM
Vertamatti R, Arjona Ramírez M. Human asymmetry in multibiometric recognition. Proceedings of CIBIM 2011. 2011 ;[citado 2024 jun. 19 ]
Vancouver
Vertamatti R, Arjona Ramírez M. Human asymmetry in multibiometric recognition. Proceedings of CIBIM 2011. 2011 ;[citado 2024 jun. 19 ]
Trabalho de evento-resumo
OLEDs with fac-[ClRe'(CO) IND. 3'(bpy)] for luminous efficiency enhancement (2011)
Mizoguchi, Sergio Kenji; Andrade, Adnei Melges de ; Santos, Gerson; Fonseca, Fernando Josepetti ; Pereira, Luiz; Iha, Neyde Yukie Murakami
Source: Book of Abstracts. Conference titles: International Symposium on the Photochemistry and Photophysics of Coordination Compounds. Unidades: IEE, EP, IQ
Subjects: FOTOQUÍMICA, CÉLULAS SOLARES
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ABNT
MIZOGUCHI, Sergio Kenji et al. OLEDs with fac-[ClRe'(CO) IND. 3'(bpy)] for luminous efficiency enhancement. 2011, Anais.. Strasbourg: Université de Strasbourg, 2011. . Acesso em: 19 jun. 2024.
APA
Mizoguchi, S. K., Andrade, A. M. de, Santos, G., Fonseca, F. J., Pereira, L., & Iha, N. Y. M. (2011). OLEDs with fac-[ClRe'(CO) IND. 3'(bpy)] for luminous efficiency enhancement. In Book of Abstracts. Strasbourg: Université de Strasbourg.
NLM
Mizoguchi SK, Andrade AM de, Santos G, Fonseca FJ, Pereira L, Iha NYM. OLEDs with fac-[ClRe'(CO) IND. 3'(bpy)] for luminous efficiency enhancement. Book of Abstracts. 2011 ;[citado 2024 jun. 19 ]
Vancouver
Mizoguchi SK, Andrade AM de, Santos G, Fonseca FJ, Pereira L, Iha NYM. OLEDs with fac-[ClRe'(CO) IND. 3'(bpy)] for luminous efficiency enhancement. Book of Abstracts. 2011 ;[citado 2024 jun. 19 ]
Artigo de periodico
Impact of SEG on uniaxially strained MuGFET performance (2011)
Agopian, Paula Ghedini Der ; Pacheco, Vinicius Heltai; Martino, João Antonio ; Simoen, Eddy ; Claeys, Cor
Source: Solid-state electronics. Unidade: EP
Assunto: BAIXA TEMPERATURA
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ABNT
AGOPIAN, Paula Ghedini Der et al. Impact of SEG on uniaxially strained MuGFET performance. Solid-state electronics, v. 59, n. 1, p. 13-17, 2011Tradução . . Disponível em: https://doi.org/10.1016/j.sse.2011.01.009. Acesso em: 19 jun. 2024.
APA
Agopian, P. G. D., Pacheco, V. H., Martino, J. A., Simoen, E., & Claeys, C. (2011). Impact of SEG on uniaxially strained MuGFET performance. Solid-state electronics, 59( 1), 13-17. doi:10.1016/j.sse.2011.01.009
NLM
Agopian PGD, Pacheco VH, Martino JA, Simoen E, Claeys C. Impact of SEG on uniaxially strained MuGFET performance [Internet]. Solid-state electronics. 2011 ; 59( 1): 13-17.[citado 2024 jun. 19 ] Available from: https://doi.org/10.1016/j.sse.2011.01.009
Vancouver
Agopian PGD, Pacheco VH, Martino JA, Simoen E, Claeys C. Impact of SEG on uniaxially strained MuGFET performance [Internet]. Solid-state electronics. 2011 ; 59( 1): 13-17.[citado 2024 jun. 19 ] Available from: https://doi.org/10.1016/j.sse.2011.01.009
Trabalho de evento
A statistical analysis of the dual-mode CMA (2010)
Candido, Renato ; Silva, Magno Teófilo Madeira da ; Miranda, Maria das Dores dos Santos; Nascimento, Vítor Heloiz
Source: Proceedings of IEEE ISCAS. Conference titles: IEEE International Symposium on Circuits and Systems. Unidade: EP
Assunto: SISTEMA DE COMUNICAÇÃO
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ABNT
CANDIDO, Renato et al. A statistical analysis of the dual-mode CMA. 2010, Anais.. Paris: Escola Politécnica, Universidade de São Paulo, 2010. Disponível em: https://doi.org/10.1109/ISCAS.2010.5537119. Acesso em: 19 jun. 2024.
APA
Candido, R., Silva, M. T. M. da, Miranda, M. das D. dos S., & Nascimento, V. H. (2010). A statistical analysis of the dual-mode CMA. In Proceedings of IEEE ISCAS. Paris: Escola Politécnica, Universidade de São Paulo. doi:10.1109/ISCAS.2010.5537119
NLM
Candido R, Silva MTM da, Miranda M das D dos S, Nascimento VH. A statistical analysis of the dual-mode CMA [Internet]. Proceedings of IEEE ISCAS. 2010 ;[citado 2024 jun. 19 ] Available from: https://doi.org/10.1109/ISCAS.2010.5537119
Vancouver
Candido R, Silva MTM da, Miranda M das D dos S, Nascimento VH. A statistical analysis of the dual-mode CMA [Internet]. Proceedings of IEEE ISCAS. 2010 ;[citado 2024 jun. 19 ] Available from: https://doi.org/10.1109/ISCAS.2010.5537119
Artigo de periodico
Low temperature operation of 0.13 'mü' partially-depleted SOI nMOSFETs with floating body (2002)
Pavanello, Marcelo Antonio ; Martino, João Antonio ; Mercha, A.; Rafi, J.M.; Simoen, Eddy ; Claeys, Cor ; Van Meer, H.; De Meyer, K.
Source: Journal de Physique IV. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS MOS
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ABNT
PAVANELLO, Marcelo Antonio et al. Low temperature operation of 0.13 'mü' partially-depleted SOI nMOSFETs with floating body. Journal de Physique IV, v. 12, n. 3, 2002Tradução . . Acesso em: 19 jun. 2024.
APA
Pavanello, M. A., Martino, J. A., Mercha, A., Rafi, J. M., Simoen, E., Claeys, C., et al. (2002). Low temperature operation of 0.13 'mü' partially-depleted SOI nMOSFETs with floating body. Journal de Physique IV, 12( 3).
NLM
Pavanello MA, Martino JA, Mercha A, Rafi JM, Simoen E, Claeys C, Van Meer H, De Meyer K. Low temperature operation of 0.13 'mü' partially-depleted SOI nMOSFETs with floating body. Journal de Physique IV. 2002 ;12( 3):[citado 2024 jun. 19 ]
Vancouver
Pavanello MA, Martino JA, Mercha A, Rafi JM, Simoen E, Claeys C, Van Meer H, De Meyer K. Low temperature operation of 0.13 'mü' partially-depleted SOI nMOSFETs with floating body. Journal de Physique IV. 2002 ;12( 3):[citado 2024 jun. 19 ]
Artigo de periodico
Low temperature operation of graded-channel SOI nMOSFETs for analog applications (2002)
Pavanello, Marcelo Antonio ; Agopian, Paula Ghedini Der ; Martino, João Antonio ; Flandre, Denis
Source: Journal de Physique IV. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS MOS
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ABNT
PAVANELLO, Marcelo Antonio et al. Low temperature operation of graded-channel SOI nMOSFETs for analog applications. Journal de Physique IV, v. 12, n. 3, 2002Tradução . . Disponível em: https://doi.org/10.1051/jp420020030. Acesso em: 19 jun. 2024.
APA
Pavanello, M. A., Agopian, P. G. D., Martino, J. A., & Flandre, D. (2002). Low temperature operation of graded-channel SOI nMOSFETs for analog applications. Journal de Physique IV, 12( 3). doi:10.1051/jp420020030
NLM
Pavanello MA, Agopian PGD, Martino JA, Flandre D. Low temperature operation of graded-channel SOI nMOSFETs for analog applications [Internet]. Journal de Physique IV. 2002 ;12( 3):[citado 2024 jun. 19 ] Available from: https://doi.org/10.1051/jp420020030
Vancouver
Pavanello MA, Agopian PGD, Martino JA, Flandre D. Low temperature operation of graded-channel SOI nMOSFETs for analog applications [Internet]. Journal de Physique IV. 2002 ;12( 3):[citado 2024 jun. 19 ] Available from: https://doi.org/10.1051/jp420020030
Trabalho de evento
The effect of electrode materials on etching mechanisms (2001)
Ruas, Ronaldo; Verdonck, Patrick Bernard; Mansano, Ronaldo Domingues ; Braithwaite, Nicholas
Source: Proceedings. Conference titles: International Symposium on Plasma Chemistry. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
RUAS, Ronaldo et al. The effect of electrode materials on etching mechanisms. 2001, Anais.. Orleans: ISPC, 2001. . Acesso em: 19 jun. 2024.
APA
Ruas, R., Verdonck, P. B., Mansano, R. D., & Braithwaite, N. (2001). The effect of electrode materials on etching mechanisms. In Proceedings. Orleans: ISPC.
NLM
Ruas R, Verdonck PB, Mansano RD, Braithwaite N. The effect of electrode materials on etching mechanisms. Proceedings. 2001 ;[citado 2024 jun. 19 ]
Vancouver
Ruas R, Verdonck PB, Mansano RD, Braithwaite N. The effect of electrode materials on etching mechanisms. Proceedings. 2001 ;[citado 2024 jun. 19 ]
Trabalho de evento-resumo
Photoconduction in Schottky diodes with ´MI´c-Si:H(n)/poly(o-methoxyaniline)/a-Si:H(p) structure (1998)
Onmori, Roberto Koji ; Dirani, Ely Antonio Tadeu ; Faria, Roberto Mendonça ; Andrade, Adnei Melges de
Source: Book of Abstracts. Conference titles: International Conference on Science and Technology of Synthetic Metals. Unidades: IFSC, EP
Assunto: DIODOS
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ABNT
ONMORI, Roberto Koji et al. Photoconduction in Schottky diodes with ´MI´c-Si:H(n)/poly(o-methoxyaniline)/a-Si:H(p) structure. 1998, Anais.. Montpellier: Instituto de Física de São Carlos, Universidade de São Paulo, 1998. . Acesso em: 19 jun. 2024.
APA
Onmori, R. K., Dirani, E. A. T., Faria, R. M., & Andrade, A. M. de. (1998). Photoconduction in Schottky diodes with ´MI´c-Si:H(n)/poly(o-methoxyaniline)/a-Si:H(p) structure. In Book of Abstracts. Montpellier: Instituto de Física de São Carlos, Universidade de São Paulo.
NLM
Onmori RK, Dirani EAT, Faria RM, Andrade AM de. Photoconduction in Schottky diodes with ´MI´c-Si:H(n)/poly(o-methoxyaniline)/a-Si:H(p) structure. Book of Abstracts. 1998 ;[citado 2024 jun. 19 ]
Vancouver
Onmori RK, Dirani EAT, Faria RM, Andrade AM de. Photoconduction in Schottky diodes with ´MI´c-Si:H(n)/poly(o-methoxyaniline)/a-Si:H(p) structure. Book of Abstracts. 1998 ;[citado 2024 jun. 19 ]
Trabalho de evento
Silicon wall profiles generated by isotropic dry etching process (1997)
Mansano, Ronaldo Domingues ; Verdonck, Patrick Bernard; Maciel, Homero Santiago
Source: CIP'97 : proceedings. Conference titles: International Colloquium on Plasma Processes. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
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ABNT
MANSANO, Ronaldo Domingues e VERDONCK, Patrick Bernard e MACIEL, Homero Santiago. Silicon wall profiles generated by isotropic dry etching process. 1997, Anais.. Paris: Société Française du Vide, 1997. . Acesso em: 19 jun. 2024.
APA
Mansano, R. D., Verdonck, P. B., & Maciel, H. S. (1997). Silicon wall profiles generated by isotropic dry etching process. In CIP'97 : proceedings. Paris: Société Française du Vide.
NLM
Mansano RD, Verdonck PB, Maciel HS. Silicon wall profiles generated by isotropic dry etching process. CIP'97 : proceedings. 1997 ;[citado 2024 jun. 19 ]
Vancouver
Mansano RD, Verdonck PB, Maciel HS. Silicon wall profiles generated by isotropic dry etching process. CIP'97 : proceedings. 1997 ;[citado 2024 jun. 19 ]

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