Low-frequency noise for different gate dielectrics on state-of-the-art UTBOX SOI nMOSFETs (2013)
- Authors:
- Autor USP: MARTINO, JOAO ANTONIO - EP
- Unidade: EP
- Assunto: MICROELETRÔNICA (CONGRESSOS)
- Language: Inglês
- Imprenta:
- Publisher: Institut Superieur d'Électronique
- Publisher place: Paris
- Date published: 2013
- Source:
- Título do periódico: EUROSOI 2013
- Conference titles: European Workshop on Silicon on Insulator Technology, Devices and Circuits
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ABNT
MARTINO, João Antonio; SANTOS, S. D.; SIMOEN, E.; et al. Low-frequency noise for different gate dielectrics on state-of-the-art UTBOX SOI nMOSFETs. Anais.. Paris: Institut Superieur d'Électronique, 2013. -
APA
Martino, J. A., Santos, S. D., Simoen, E., Strobe, V., Cretu, B., Routoure, J. -M., et al. (2013). Low-frequency noise for different gate dielectrics on state-of-the-art UTBOX SOI nMOSFETs. In EUROSOI 2013. Paris: Institut Superieur d'Électronique. -
NLM
Martino JA, Santos SD, Simoen E, Strobe V, Cretu B, Routoure J-M, Carin R, Aoulaiche M, Veloso A, Claeys C. Low-frequency noise for different gate dielectrics on state-of-the-art UTBOX SOI nMOSFETs. EUROSOI 2013. 2013 ; -
Vancouver
Martino JA, Santos SD, Simoen E, Strobe V, Cretu B, Routoure J-M, Carin R, Aoulaiche M, Veloso A, Claeys C. Low-frequency noise for different gate dielectrics on state-of-the-art UTBOX SOI nMOSFETs. EUROSOI 2013. 2013 ; - Transistor soi-nmosfet nao auto-alinhado
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- Simple method for the determination of the interface trap density at 77k in fully depleted acumulation mode soi mosfets
- Metodo simples para a obtencao da densidade de armadilhas na primeira e segunda interface em soi-mosfet
- Combined l and series resistance extraction of ldd mosfets
- Influencia da temperatura em transistores soi (silicon on insulator) mosfets
- New method for determination of the fixed charge densities at the buried oxide interfaces in soi mosfets
- Modelagem do substrato e novos métodos de caracterização elétrica de SOI MOSFET
- A novel leakage drain current model for SOI MOSFETs devices at high temperature
- Components of the leakage current in enhancement-mode SOI nMOSFETs at high temperature. (em CD-Rom)
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