Silicon wall profiles generated by isotropic dry etching process (1997)
- Authors:
- USP affiliated authors: VERDONCK, PATRICK BERNARD - EP ; MACIEL, HOMERO SANTIAGO - EP ; MANSANO, RONALDO DOMINGUES - EP
- Unidade: EP
- Assunto: CIRCUITOS INTEGRADOS
- Language: Inglês
- Imprenta:
- Publisher: Société Française du Vide
- Publisher place: Paris
- Date published: 1997
- Source:
- Título: CIP'97 : proceedings
- Conference titles: International Colloquium on Plasma Processes
-
ABNT
MANSANO, Ronaldo Domingues e VERDONCK, Patrick Bernard e MACIEL, Homero Santiago. Silicon wall profiles generated by isotropic dry etching process. 1997, Anais.. Paris: Société Française du Vide, 1997. . Acesso em: 17 nov. 2025. -
APA
Mansano, R. D., Verdonck, P. B., & Maciel, H. S. (1997). Silicon wall profiles generated by isotropic dry etching process. In CIP'97 : proceedings. Paris: Société Française du Vide. -
NLM
Mansano RD, Verdonck PB, Maciel HS. Silicon wall profiles generated by isotropic dry etching process. CIP'97 : proceedings. 1997 ;[citado 2025 nov. 17 ] -
Vancouver
Mansano RD, Verdonck PB, Maciel HS. Silicon wall profiles generated by isotropic dry etching process. CIP'97 : proceedings. 1997 ;[citado 2025 nov. 17 ] - Characterization of mode transitions for RF discharges in different gases
- Silicon surface roughness induced by reactive ion etching processes, using a graphite electrode. (Em CD-Rom)
- Influence of methane addition on the characteristics of magnetron sputtered hydrogenated carbon films
- Effects of plasma etching on DLC films
- Electrical and structural characterisation of DLC films deposited by magnetron sputtering
- Mechanisms of surface roughness induced in silicon by fluorine containing plasmas
- The influence of nitrogen on the dielectric constant and surface hardness in diamond-like carbon (DLC) films
- A comparative study of single and double langmuir probe techniques for RF plasma characterization
- Performance characterization of an RIE reactor with built-in RF excitation antenna
- Silicon surface roughness induced by SF6-based reactive ion etching processes for micromachining applications
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
