Anisotropic reactive ion etching in silicon, using a graphite electrode (1998)
- Authors:
- USP affiliated authors: VERDONCK, PATRICK BERNARD - EP ; MANSANO, RONALDO DOMINGUES - EP ; MACIEL, HOMERO SANTIAGO - EP
- Unidade: EP
- DOI: 10.1016/s0924-4247(97)01681-6
- Assunto: CIRCUITOS INTEGRADOS
- Language: Inglês
- Imprenta:
- Source:
- Título: Sensors and Actuators A
- ISSN: 0924-4247
- Volume/Número/Paginação/Ano: v. 65, n. 2-3, p. 180-186, 1998
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
MANSANO, Ronaldo Domingues e VERDONCK, Patrick Bernard e MACIEL, Homero Santiago. Anisotropic reactive ion etching in silicon, using a graphite electrode. Sensors and Actuators A, v. 65, n. 2-3, p. 180-186, 1998Tradução . . Disponível em: https://doi.org/10.1016/s0924-4247(97)01681-6. Acesso em: 27 dez. 2025. -
APA
Mansano, R. D., Verdonck, P. B., & Maciel, H. S. (1998). Anisotropic reactive ion etching in silicon, using a graphite electrode. Sensors and Actuators A, 65( 2-3), 180-186. doi:10.1016/s0924-4247(97)01681-6 -
NLM
Mansano RD, Verdonck PB, Maciel HS. Anisotropic reactive ion etching in silicon, using a graphite electrode [Internet]. Sensors and Actuators A. 1998 ; 65( 2-3): 180-186.[citado 2025 dez. 27 ] Available from: https://doi.org/10.1016/s0924-4247(97)01681-6 -
Vancouver
Mansano RD, Verdonck PB, Maciel HS. Anisotropic reactive ion etching in silicon, using a graphite electrode [Internet]. Sensors and Actuators A. 1998 ; 65( 2-3): 180-186.[citado 2025 dez. 27 ] Available from: https://doi.org/10.1016/s0924-4247(97)01681-6 - Characterization of mode transitions for RF discharges in different gases
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Informações sobre o DOI: 10.1016/s0924-4247(97)01681-6 (Fonte: oaDOI API)
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