End-point detection of polymer etching using Lagmuir probes (2000)
- Authors:
- USP affiliated authors: VERDONCK, PATRICK BERNARD - EP ; MANSANO, RONALDO DOMINGUES - EP ; MACIEL, HOMERO SANTIAGO - EP
- Unidade: EP
- DOI: 10.1109/27.887774
- Assunto: CIRCUITOS INTEGRADOS
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: IEEE Transactions on Plasma Science
- ISSN: 0093-3813
- Volume/Número/Paginação/Ano: v. 28, n. 3, p. 1043-1049, Jun. 2000
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
CASTRO, Raul Murete de et al. End-point detection of polymer etching using Lagmuir probes. IEEE Transactions on Plasma Science, v. 28, n. Ju 2000, p. 1043-1049, 2000Tradução . . Disponível em: https://doi.org/10.1109/27.887774. Acesso em: 23 abr. 2024. -
APA
Castro, R. M. de, Verdonck, P. B., Pisani, M. B., Mansano, R. D., Cirino, G. A., Maciel, H. S., & Massi, M. (2000). End-point detection of polymer etching using Lagmuir probes. IEEE Transactions on Plasma Science, 28( Ju 2000), 1043-1049. doi:10.1109/27.887774 -
NLM
Castro RM de, Verdonck PB, Pisani MB, Mansano RD, Cirino GA, Maciel HS, Massi M. End-point detection of polymer etching using Lagmuir probes [Internet]. IEEE Transactions on Plasma Science. 2000 ; 28( Ju 2000): 1043-1049.[citado 2024 abr. 23 ] Available from: https://doi.org/10.1109/27.887774 -
Vancouver
Castro RM de, Verdonck PB, Pisani MB, Mansano RD, Cirino GA, Maciel HS, Massi M. End-point detection of polymer etching using Lagmuir probes [Internet]. IEEE Transactions on Plasma Science. 2000 ; 28( Ju 2000): 1043-1049.[citado 2024 abr. 23 ] Available from: https://doi.org/10.1109/27.887774 - Characterization of mode transitions for RF discharges in different gases
- Silicon surface roughness induced by reactive ion etching processes, using a graphite electrode. (Em CD-Rom)
- Comparison between single and double Langmuir probe tecniques for analysis of inductively coupled plasmas
- Influence of methane addition on the characteristics of magnetron sputtered hydrogenated carbon films
- Effects of plasma etching on DLC films
- Electrical and structural characterisation of DLC films deposited by magnetron sputtering
- Silicon wall profiles generated by isotropic dry etching process
- A comparative study of single and double langmuir probe techniques for RF plasma characterization
- Silicon surface roughness induced by SF6-based reactive ion etching process for micromachining applications
- Performance characterization of an RIE reactor with built-in RF excitation antenna
Informações sobre o DOI: 10.1109/27.887774 (Fonte: oaDOI API)
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
