Silicon surface roughness induced by SF6-based reactive ion etching processes for micromachining applications (1998)
- Authors:
- USP affiliated authors: VERDONCK, PATRICK BERNARD - EP ; MACIEL, HOMERO SANTIAGO - EP ; MANSANO, RONALDO DOMINGUES - EP
- Unidade: EP
- Assunto: CIRCUITOS INTEGRADOS
- Language: Inglês
- Imprenta:
- Source:
- Título: Journal of Solid-State Devices and Circuits
- ISSN: 0104-9631
- Volume/Número/Paginação/Ano: v. 6, n. 1, p. 1-6, 1998
-
ABNT
VERDONCK, Patrick Bernard et al. Silicon surface roughness induced by SF6-based reactive ion etching processes for micromachining applications. Journal of Solid-State Devices and Circuits, v. 6, n. 1, p. 1-6, 1998Tradução . . Acesso em: 27 dez. 2025. -
APA
Verdonck, P. B., Mansano, R. D., Maciel, H. S., & Salvadori, M. C. B. da S. (1998). Silicon surface roughness induced by SF6-based reactive ion etching processes for micromachining applications. Journal of Solid-State Devices and Circuits, 6( 1), 1-6. -
NLM
Verdonck PB, Mansano RD, Maciel HS, Salvadori MCB da S. Silicon surface roughness induced by SF6-based reactive ion etching processes for micromachining applications. Journal of Solid-State Devices and Circuits. 1998 ; 6( 1): 1-6.[citado 2025 dez. 27 ] -
Vancouver
Verdonck PB, Mansano RD, Maciel HS, Salvadori MCB da S. Silicon surface roughness induced by SF6-based reactive ion etching processes for micromachining applications. Journal of Solid-State Devices and Circuits. 1998 ; 6( 1): 1-6.[citado 2025 dez. 27 ] - Characterization of mode transitions for RF discharges in different gases
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