Influence of methane addition on the characteristics of magnetron sputtered hydrogenated carbon films (1999)
- Authors:
- USP affiliated authors: VERDONCK, PATRICK BERNARD - EP ; MANSANO, RONALDO DOMINGUES - EP ; MACIEL, HOMERO SANTIAGO - EP
- Unidade: EP
- Assunto: FILMES
- Language: Inglês
- Imprenta:
- Publisher: SBMicro/IMAPS
- Publisher place: São Paulo
- Date published: 1999
- Source:
- Título do periódico: ICMP 99: technical digest
- Conference titles: International Conference on Microelectronics and Packaging
-
ABNT
MANSANO, Ronaldo Domingues et al. Influence of methane addition on the characteristics of magnetron sputtered hydrogenated carbon films. 1999, Anais.. São Paulo: SBMicro/IMAPS, 1999. . Acesso em: 23 jul. 2024. -
APA
Mansano, R. D., Nogueira, P. M., Zambom, L. da S., Verdonck, P. B., Massi, M., & Maciel, H. S. (1999). Influence of methane addition on the characteristics of magnetron sputtered hydrogenated carbon films. In ICMP 99: technical digest. São Paulo: SBMicro/IMAPS. -
NLM
Mansano RD, Nogueira PM, Zambom L da S, Verdonck PB, Massi M, Maciel HS. Influence of methane addition on the characteristics of magnetron sputtered hydrogenated carbon films. ICMP 99: technical digest. 1999 ;[citado 2024 jul. 23 ] -
Vancouver
Mansano RD, Nogueira PM, Zambom L da S, Verdonck PB, Massi M, Maciel HS. Influence of methane addition on the characteristics of magnetron sputtered hydrogenated carbon films. ICMP 99: technical digest. 1999 ;[citado 2024 jul. 23 ] - Characterization of mode transitions for RF discharges in different gases
- Silicon surface roughness induced by reactive ion etching processes, using a graphite electrode. (Em CD-Rom)
- Comparison between single and double Langmuir probe tecniques for analysis of inductively coupled plasmas
- Effects of plasma etching on DLC films
- Electrical and structural characterisation of DLC films deposited by magnetron sputtering
- Silicon wall profiles generated by isotropic dry etching process
- A comparative study of single and double langmuir probe techniques for RF plasma characterization
- Silicon surface roughness induced by SF6-based reactive ion etching process for micromachining applications
- Performance characterization of an RIE reactor with built-in RF excitation antenna
- Influence of plasma etching on Raman spectra of DLC films deposited by magnetron sputtering
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