Study of the Main Digital and Analog Parameters of Underlapped MuGFETs (2012)
- Authors:
- Autor USP: MARTINO, JOAO ANTONIO - EP
- Unidade: EP
- Assunto: MICROELETRÔNICA (CONGRESSOS)
- Language: Inglês
- Imprenta:
- Publisher: Institut d'Électronique
- Publisher place: S.l
- Date published: 2012
- Source:
- Conference titles: European Workshop on Silicon on Insulator Technology, Devices and Circuits
-
ABNT
MARTINO, João Antonio et al. Study of the Main Digital and Analog Parameters of Underlapped MuGFETs. VIII Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits. S.l: Institut d'Électronique. . Acesso em: 17 nov. 2024. , 2012 -
APA
Martino, J. A., Santos, S. D. dos, Nicoletti, T., Aoulaiche, M., Simoen, E., & Claeys, C. (2012). Study of the Main Digital and Analog Parameters of Underlapped MuGFETs. VIII Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits. S.l: Institut d'Électronique. -
NLM
Martino JA, Santos SD dos, Nicoletti T, Aoulaiche M, Simoen E, Claeys C. Study of the Main Digital and Analog Parameters of Underlapped MuGFETs. VIII Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits. 2012 ;[citado 2024 nov. 17 ] -
Vancouver
Martino JA, Santos SD dos, Nicoletti T, Aoulaiche M, Simoen E, Claeys C. Study of the Main Digital and Analog Parameters of Underlapped MuGFETs. VIII Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits. 2012 ;[citado 2024 nov. 17 ] - Temperature influences on the drain leakage current behavior in graded-channel SOI nMOSFETs
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