Fonte: Proceedings. Nome do evento: International Meeting on Chemical Sensors. Unidade: EP
Assunto: SENSORES QUÍMICOS
ABNT
DANTAS, Michel Oliveira da Silva et al. Novel Si field emission devices fabrication method based on HI-PS technique for gas sensors development. 2008, Anais.. Columbus: Escola Politécnica, Universidade de São Paulo, 2008. . Acesso em: 22 ago. 2024.APA
Dantas, M. O. da S., Galeazzo, E., Peres, H. E. M., Kopelvski, M. M., & Ramírez Fernandez, F. J. (2008). Novel Si field emission devices fabrication method based on HI-PS technique for gas sensors development. In Proceedings. Columbus: Escola Politécnica, Universidade de São Paulo.NLM
Dantas MO da S, Galeazzo E, Peres HEM, Kopelvski MM, Ramírez Fernandez FJ. Novel Si field emission devices fabrication method based on HI-PS technique for gas sensors development. Proceedings. 2008 ;[citado 2024 ago. 22 ]Vancouver
Dantas MO da S, Galeazzo E, Peres HEM, Kopelvski MM, Ramírez Fernandez FJ. Novel Si field emission devices fabrication method based on HI-PS technique for gas sensors development. Proceedings. 2008 ;[citado 2024 ago. 22 ]