Novel Si field emission devices fabrication method based on HI-PS technique for gas sensors development (2008)
- Authors:
- USP affiliated authors: GALEAZZO, ELISABETE - EP ; PERES, HENRIQUE ESTANISLAU MALDONADO - EP ; FERNANDEZ, FRANCISCO JAVIER RAMIREZ - EP
- Unidade: EP
- Assunto: SENSORES QUÍMICOS
- Language: Inglês
- Imprenta:
- Source:
- Título: Proceedings
- Conference titles: International Meeting on Chemical Sensors
-
ABNT
DANTAS, Michel Oliveira da Silva et al. Novel Si field emission devices fabrication method based on HI-PS technique for gas sensors development. 2008, Anais.. Columbus: Escola Politécnica, Universidade de São Paulo, 2008. . Acesso em: 17 out. 2024. -
APA
Dantas, M. O. da S., Galeazzo, E., Peres, H. E. M., Kopelvski, M. M., & Ramírez Fernandez, F. J. (2008). Novel Si field emission devices fabrication method based on HI-PS technique for gas sensors development. In Proceedings. Columbus: Escola Politécnica, Universidade de São Paulo. -
NLM
Dantas MO da S, Galeazzo E, Peres HEM, Kopelvski MM, Ramírez Fernandez FJ. Novel Si field emission devices fabrication method based on HI-PS technique for gas sensors development. Proceedings. 2008 ;[citado 2024 out. 17 ] -
Vancouver
Dantas MO da S, Galeazzo E, Peres HEM, Kopelvski MM, Ramírez Fernandez FJ. Novel Si field emission devices fabrication method based on HI-PS technique for gas sensors development. Proceedings. 2008 ;[citado 2024 out. 17 ] - Dispositivos de teste da implantacao ionica de j2
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- Silicon micromechanical structures fabricated by electrochemical process
- Porous silicon sacrifical layers applied on micromechanical structures fabrication
- Electrochemical process for silicon tips fabrication
- Responses of porous silicon to organic vapors
- Electrochemical process for MEMS fabrication
- Porous silicon for gas sensor applications
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