Low-Frequency Noise Studies on Fully Depleted UTBOX Silicon-on-Insulator nMOSFETs: Challenges and Opportunities (2013)
- Authors:
- USP affiliated authors: MARTINO, JOÃO ANTONIO - EP ; Rodriguez, Adriana Pinheiro Martinelli -
- Unidade: EP
- DOI: 10.1149/2.011311jss
- Subjects: SILÍCIO; FILMES FINOS
- Language: Inglês
- Source:
- Título: ECS Journal of Solid State Science and Technology
- Volume/Número/Paginação/Ano: v. 2, n. 11, p. Q205-Q210, 2013
- Este periódico é de acesso aberto
- Este artigo NÃO é de acesso aberto
-
ABNT
SIMOEN, Eddy et al. Low-Frequency Noise Studies on Fully Depleted UTBOX Silicon-on-Insulator nMOSFETs: Challenges and Opportunities. ECS Journal of Solid State Science and Technology, v. 2, n. 11, p. Q205-Q210, 2013Tradução . . Disponível em: https://doi.org/10.1149/2.011311jss. Acesso em: 10 fev. 2026. -
APA
Simoen, E., Martino, J. A., Aoulaiche, M., Santos, S. D. dos, Strobel, V., Cretu, B., et al. (2013). Low-Frequency Noise Studies on Fully Depleted UTBOX Silicon-on-Insulator nMOSFETs: Challenges and Opportunities. ECS Journal of Solid State Science and Technology, 2( 11), Q205-Q210. doi:10.1149/2.011311jss -
NLM
Simoen E, Martino JA, Aoulaiche M, Santos SD dos, Strobel V, Cretu B, Routoure J-M, Carin R, Tejada J, Claeys C, Rodríguez AL. Low-Frequency Noise Studies on Fully Depleted UTBOX Silicon-on-Insulator nMOSFETs: Challenges and Opportunities [Internet]. ECS Journal of Solid State Science and Technology. 2013 ; 2( 11): Q205-Q210.[citado 2026 fev. 10 ] Available from: https://doi.org/10.1149/2.011311jss -
Vancouver
Simoen E, Martino JA, Aoulaiche M, Santos SD dos, Strobel V, Cretu B, Routoure J-M, Carin R, Tejada J, Claeys C, Rodríguez AL. Low-Frequency Noise Studies on Fully Depleted UTBOX Silicon-on-Insulator nMOSFETs: Challenges and Opportunities [Internet]. ECS Journal of Solid State Science and Technology. 2013 ; 2( 11): Q205-Q210.[citado 2026 fev. 10 ] Available from: https://doi.org/10.1149/2.011311jss - Impact of TiN metal gate thickness and the HsSiO nitridation on MuGFETs electrical performance
- Caracterização elétrica de dispositivos SOI MOS em baixa temperatura
- Metodo simples para a obtencao da densidade de armadilhas na primeira e segunda interface em soi-mosfet
- Combined l and series resistance extraction of ldd mosfets
- Influencia da temperatura em transistores soi (silicon on insulator) mosfets
- Impact of substrate effect on the fully depleted soi mesfet subthreshold slope at 300k and 77k
- The impact of gate length scaling on UTBOX FDSOI devices: the digital/analog performance of extension-less structures
- Simple method for the determination of the interface trap density at 77k in fully depleted acumulation mode soi mosfets
- Transistor soi-nmosfet nao auto-alinhado
- Impact of selective epitaxial growth and uniaxial/biaxial strain on DIBL effect using triple gate FinFETs
Informações sobre o DOI: 10.1149/2.011311jss (Fonte: oaDOI API)
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