RTN assessment of traps in polysilicon cylindrical vertical FETs for NVM application (2013)
- Authors:
- Autor USP: MARTINO, JOÃO ANTONIO - EP
- Unidade: EP
- DOI: 10.1016/j.mee.2013.03.019
- Assunto: MICROELETRÔNICA
- Language: Inglês
- Source:
- Título: Microelectronic Engineering Volume 109, September 2013, Pages 105-108
- Volume/Número/Paginação/Ano: v. 109, p. 105-108, Sep 2013
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
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ABNT
CAÑO DE ANDRADE, Maria Glória et al. RTN assessment of traps in polysilicon cylindrical vertical FETs for NVM application. Microelectronic Engineering Volume 109, September 2013, Pages 105-108, v. 109, p. 105-108, 2013Tradução . . Disponível em: https://doi.org/10.1016/j.mee.2013.03.019. Acesso em: 02 out. 2024. -
APA
Caño de Andrade, M. G., Martino, J. A., Toledano, M., Fourati, F., Degraeve, R., Claeys, C., et al. (2013). RTN assessment of traps in polysilicon cylindrical vertical FETs for NVM application. Microelectronic Engineering Volume 109, September 2013, Pages 105-108, 109, 105-108. doi:10.1016/j.mee.2013.03.019 -
NLM
Caño de Andrade MG, Martino JA, Toledano M, Fourati F, Degraeve R, Claeys C, Simoen E, Van den Bosch G, Van Houdt J. RTN assessment of traps in polysilicon cylindrical vertical FETs for NVM application [Internet]. Microelectronic Engineering Volume 109, September 2013, Pages 105-108. 2013 ; 109 105-108.[citado 2024 out. 02 ] Available from: https://doi.org/10.1016/j.mee.2013.03.019 -
Vancouver
Caño de Andrade MG, Martino JA, Toledano M, Fourati F, Degraeve R, Claeys C, Simoen E, Van den Bosch G, Van Houdt J. RTN assessment of traps in polysilicon cylindrical vertical FETs for NVM application [Internet]. Microelectronic Engineering Volume 109, September 2013, Pages 105-108. 2013 ; 109 105-108.[citado 2024 out. 02 ] Available from: https://doi.org/10.1016/j.mee.2013.03.019 - Temperature influences on the drain leakage current behavior in graded-channel SOI nMOSFETs
- Projeto de processos de fabricação avançados aplicáveis nas tecnologias CMOS micrométricas
- Analysis of the linear kink effect in partially depleted SOI nMOSFETs
- Simple method to extract the length dependent mobility degradation factor at 77 K
- Mobility degradation influence on the SOI MOSFET channel length extraction at 77K
- Low temperature and channel engineering influence on harmonic distortion of soi nmosfets for analog applications
- Analysis of the capacitance vs. voltage in graded channel SOI capacitor
- A simple technique to reduce the influence of the series resistance on the BULK and SOI MOSFET parameter extraction
- Metodo simples para a obtencao da densidade de armadilhas na primeira e segunda interface em soi-mosfet
- Simple method for the determination of the interface trap density at 77k in fully depleted acumulation mode soi mosfets
Informações sobre o DOI: 10.1016/j.mee.2013.03.019 (Fonte: oaDOI API)
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