Mobility degradation influence on the SOI MOSFET channel length extraction at 77K (1996)
- Authors:
- Autor USP: MARTINO, JOAO ANTONIO - EP
- Unidade: EP
- Assunto: CIRCUITOS INTEGRADOS MOS
- Language: Inglês
- Imprenta:
- Publisher: EDP Sciences
- Publisher place: Paris
- Date published: 1996
- Source:
- Título do periódico: Journal de Physique IV Colloque 3, supplement au Journal de Physique III
- ISSN: 0036-827X
- Volume/Número/Paginação/Ano: v.6, avril 1996
-
ABNT
NICOLETT, Aparecido Sirley; MARTINO, João Antonio; SIMOEN, Eddy; CLAEYS, Cor. Mobility degradation influence on the SOI MOSFET channel length extraction at 77K. Journal de Physique IV Colloque 3, supplement au Journal de Physique III, Paris, EDP Sciences, v. 6, 1996. -
APA
Nicolett, A. S., Martino, J. A., Simoen, E., & Claeys, C. (1996). Mobility degradation influence on the SOI MOSFET channel length extraction at 77K. Journal de Physique IV Colloque 3, supplement au Journal de Physique III, 6. -
NLM
Nicolett AS, Martino JA, Simoen E, Claeys C. Mobility degradation influence on the SOI MOSFET channel length extraction at 77K. Journal de Physique IV Colloque 3, supplement au Journal de Physique III. 1996 ;6 -
Vancouver
Nicolett AS, Martino JA, Simoen E, Claeys C. Mobility degradation influence on the SOI MOSFET channel length extraction at 77K. Journal de Physique IV Colloque 3, supplement au Journal de Physique III. 1996 ;6 - Low-Frequency noise behaviour of bulk and DTMOS triple-gate devices under 60 MeV proton irradiaton
- Extraction of the oxide charge density at front and back interfaces of SOI NMOSFET devices
- Components of the leakage current in enhancement-mode SOI nMOSFETs at high temperature. (em CD-Rom)
- A new method for determination of the oxide charge density at the buried oxide/substrate interface in SOI capacitor
- A novel leakage drain current model for SOI MOSFETs devices at high temperature
- A physically-based continuous model for graded-channel SOI MOSFET
- Transistor soi-nmosfet nao auto-alinhado
- Metodo simples para a obtencao da densidade de armadilhas na primeira e segunda interface em soi-mosfet
- Impact of substrate effect on the fully depleted soi mesfet subthreshold slope at 300k and 77k
- Influencia da temperatura em transistores soi (silicon on insulator) mosfets
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