Simple method to extract the length dependent mobility degradation factor at 77 K (1997)
- Authors:
- Autor USP: MARTINO, JOAO ANTONIO - EP
- Unidade: EP
- Subjects: CIRCUITOS INTEGRADOS; MICROELETRÔNICA
- Language: Inglês
- Imprenta:
- Publisher: The Electrochemical Society
- Publisher place: Pennington
- Date published: 1997
- Source:
- Conference titles: Symposium Low Temperature Electronics and High Temperature Superconductivity
-
ABNT
NICOLETT, Aparecido Sirley et al. Simple method to extract the length dependent mobility degradation factor at 77 K. 4. Symposium on Low Temperature Electronics and High Temperature Superconductivity: proceedings. Tradução . Pennington: The Electrochemical Society, 1997. . . Acesso em: 26 jul. 2024. -
APA
Nicolett, A. S., Martino, J. A., Simoen, E., & Claeys, C. (1997). Simple method to extract the length dependent mobility degradation factor at 77 K. In 4. Symposium on Low Temperature Electronics and High Temperature Superconductivity: proceedings. Pennington: The Electrochemical Society. -
NLM
Nicolett AS, Martino JA, Simoen E, Claeys C. Simple method to extract the length dependent mobility degradation factor at 77 K. In: 4. Symposium on Low Temperature Electronics and High Temperature Superconductivity: proceedings. Pennington: The Electrochemical Society; 1997. [citado 2024 jul. 26 ] -
Vancouver
Nicolett AS, Martino JA, Simoen E, Claeys C. Simple method to extract the length dependent mobility degradation factor at 77 K. In: 4. Symposium on Low Temperature Electronics and High Temperature Superconductivity: proceedings. Pennington: The Electrochemical Society; 1997. [citado 2024 jul. 26 ] - Temperature influences on the drain leakage current behavior in graded-channel SOI nMOSFETs
- Projeto de processos de fabricação avançados aplicáveis nas tecnologias CMOS micrométricas
- Analysis of the linear kink effect in partially depleted SOI nMOSFETs
- Mobility degradation influence on the SOI MOSFET channel length extraction at 77K
- Low temperature and channel engineering influence on harmonic distortion of soi nmosfets for analog applications
- Analysis of the capacitance vs. voltage in graded channel SOI capacitor
- A simple technique to reduce the influence of the series resistance on the BULK and SOI MOSFET parameter extraction
- Metodo simples para a obtencao da densidade de armadilhas na primeira e segunda interface em soi-mosfet
- Simple method for the determination of the interface trap density at 77k in fully depleted acumulation mode soi mosfets
- Transistor soi-nmosfet nao auto-alinhado
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