Low-Frequency noise behaviour of bulk and DTMOS triple-gate devices under 60 MeV proton irradiaton (2012)
- Authors:
- Autor USP: MARTINO, JOÃO ANTONIO - EP
- Unidade: EP
- Assunto: CIRCUITOS INTEGRADOS
- Language: Inglês
- Imprenta:
- Publisher: IEEE
- Publisher place: Piscataway
- Date published: 2012
- Source:
- Título do periódico: Proceedings of the conference
- Conference titles: International Conference on Ultimate Integration on Silicon
-
ABNT
CAÑO DE ANDRADE, Maria Glória et al. Low-Frequency noise behaviour of bulk and DTMOS triple-gate devices under 60 MeV proton irradiaton. 2012, Anais.. Piscataway: IEEE, 2012. . Acesso em: 23 abr. 2024. -
APA
Caño de Andrade, M. G., Martino, J. A., Aoulaiche, M., Collaert, N., Simoen, E., & Claeys, C. (2012). Low-Frequency noise behaviour of bulk and DTMOS triple-gate devices under 60 MeV proton irradiaton. In Proceedings of the conference. Piscataway: IEEE. -
NLM
Caño de Andrade MG, Martino JA, Aoulaiche M, Collaert N, Simoen E, Claeys C. Low-Frequency noise behaviour of bulk and DTMOS triple-gate devices under 60 MeV proton irradiaton. Proceedings of the conference. 2012 ;[citado 2024 abr. 23 ] -
Vancouver
Caño de Andrade MG, Martino JA, Aoulaiche M, Collaert N, Simoen E, Claeys C. Low-Frequency noise behaviour of bulk and DTMOS triple-gate devices under 60 MeV proton irradiaton. Proceedings of the conference. 2012 ;[citado 2024 abr. 23 ] - Temperature influences on the drain leakage current behavior in graded-channel SOI nMOSFETs
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