An improved current model in saturation for trapezoidal finfets (2008)
- Authors:
- Autor USP: MARTINO, JOAO ANTONIO - EP
- Unidade: EP
- Assunto: MICROELETRÔNICA
- Language: Inglês
- Imprenta:
- Publisher: The Electrochemical Society
- Publisher place: Pennington
- Date published: 2008
- Source:
- Título: SBMICRO 2008: Anais
- ISSN: 1938-5862
- Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO
-
ABNT
MARTINS, Gustavo e GIACOMINI, Renato Camargo. An improved current model in saturation for trapezoidal finfets. 2008, Anais.. Pennington: The Electrochemical Society, 2008. . Acesso em: 14 fev. 2026. -
APA
Martins, G., & Giacomini, R. C. (2008). An improved current model in saturation for trapezoidal finfets. In SBMICRO 2008: Anais. Pennington: The Electrochemical Society. -
NLM
Martins G, Giacomini RC. An improved current model in saturation for trapezoidal finfets. SBMICRO 2008: Anais. 2008 ;[citado 2026 fev. 14 ] -
Vancouver
Martins G, Giacomini RC. An improved current model in saturation for trapezoidal finfets. SBMICRO 2008: Anais. 2008 ;[citado 2026 fev. 14 ] - Impact of TiN metal gate thickness and the HsSiO nitridation on MuGFETs electrical performance
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