Plasma parameters obtained with planar probe and optical emission spectroscopy (2007)
- Authors:
- Autor USP: VERDONCK, PATRICK BERNARD - EP
- Unidade: EP
- Subjects: MICROELETRÔNICA; CIÊNCIA DA COMPUTAÇÃO
- Language: Inglês
- Imprenta:
- Publisher place: São Paulo - Porto Alegre
- Date published: 2007
- Source:
- Título: Journal of Integrated Circuits and Systems
- ISSN: 1807-1953
- Volume/Número/Paginação/Ano: v. 2, n. 2, September 2007
-
ABNT
DALTRINI, Andre M et al. Plasma parameters obtained with planar probe and optical emission spectroscopy. Journal of Integrated Circuits and Systems, v. 2, n. 2, 2007Tradução . . Acesso em: 26 jan. 2026. -
APA
Daltrini, A. M., Moshkalev, S., Swart, L., & Verdonck, P. B. (2007). Plasma parameters obtained with planar probe and optical emission spectroscopy. Journal of Integrated Circuits and Systems, 2( 2). -
NLM
Daltrini AM, Moshkalev S, Swart L, Verdonck PB. Plasma parameters obtained with planar probe and optical emission spectroscopy. Journal of Integrated Circuits and Systems. 2007 ; 2( 2):[citado 2026 jan. 26 ] -
Vancouver
Daltrini AM, Moshkalev S, Swart L, Verdonck PB. Plasma parameters obtained with planar probe and optical emission spectroscopy. Journal of Integrated Circuits and Systems. 2007 ; 2( 2):[citado 2026 jan. 26 ] - The influence of diffusion of fluorine compounds for silicon lateral etching
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- Oxygen plasma etching mechanisms of resist
- Aluminium etching with CC14-N2 plasma
- Corrosão por plasma de espaçadores em óxido de silício
- Reactive ion etching and plasma etching of tungsten
- A new mechanism for silicon etching with fluorine based plasmas
- Effects of the methane content on the characteristics of diamond-like carbon films produced by sputtering
- The effect of electrode materials on etching mechanisms
- Contamination caused by reactive ion etching plasmas and subsequent cleaning procedures
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