A new mechanism for silicon etching with fluorine based plasmas (2000)
- Authors:
- Autor USP: VERDONCK, PATRICK BERNARD - EP
- Unidade: EP
- Assunto: CIRCUITOS INTEGRADOS
- Language: Inglês
- Imprenta:
- Publisher: SBMicro/UA/UFRGS/UNICAMP/USP
- Publisher place: Manaus
- Date published: 2000
- Source:
- Título: SBMicro 2000: proceedings
- Conference titles: International Conference on Microelectronics and Packaging
-
ABNT
VERDONCK, Patrick Bernard et al. A new mechanism for silicon etching with fluorine based plasmas. 2000, Anais.. Manaus: SBMicro/UA/UFRGS/UNICAMP/USP, 2000. . Acesso em: 26 jan. 2026. -
APA
Verdonck, P. B., Goodyear, A., Mansano, R. D., Barroy, P. R. J., & Braithwaite, N. S. J. (2000). A new mechanism for silicon etching with fluorine based plasmas. In SBMicro 2000: proceedings. Manaus: SBMicro/UA/UFRGS/UNICAMP/USP. -
NLM
Verdonck PB, Goodyear A, Mansano RD, Barroy PRJ, Braithwaite NSJ. A new mechanism for silicon etching with fluorine based plasmas. SBMicro 2000: proceedings. 2000 ;[citado 2026 jan. 26 ] -
Vancouver
Verdonck PB, Goodyear A, Mansano RD, Barroy PRJ, Braithwaite NSJ. A new mechanism for silicon etching with fluorine based plasmas. SBMicro 2000: proceedings. 2000 ;[citado 2026 jan. 26 ] - The influence of diffusion of fluorine compounds for silicon lateral etching
- RF electrical measurements in plasma processing reactors
- Oxygen plasma etching mechanisms of resist
- Aluminium etching with CC14-N2 plasma
- Corrosão por plasma de espaçadores em óxido de silício
- Reactive ion etching and plasma etching of tungsten
- Effects of the methane content on the characteristics of diamond-like carbon films produced by sputtering
- Plasma parameters obtained with planar probe and optical emission spectroscopy
- The effect of electrode materials on etching mechanisms
- Contamination caused by reactive ion etching plasmas and subsequent cleaning procedures
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