Optical properties and carrier effective masses of Rutile 'SnO IND.2' as obtained from full relativistic ab initio calculations (2007)
- Authors:
- USP affiliated authors: SCOLFARO, LUISA MARIA RIBEIRO - IF ; PEREYRA, INES - EP
- Unidades: IF; EP
- Subjects: SEMICONDUTORES; ESTRUTURA ELETRÔNICA
- Language: Inglês
- Imprenta:
- Publisher: The Institute
- Publisher place: New York
- Date published: 2007
- Source:
- Título: AIP Conference Proceedings
- ISSN: 1551-7616
- Volume/Número/Paginação/Ano: v. 893, p. 529-530, 2007
- Conference titles: 28th International Conference on the Physics of Semiconductors - ICPS 2006
-
ABNT
LINO, A T et al. Optical properties and carrier effective masses of Rutile 'SnO IND.2' as obtained from full relativistic ab initio calculations. AIP Conference Proceedings. New York: The Institute. Disponível em: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001000259000001&idtype=cvips&prog=normal. Acesso em: 19 fev. 2026. , 2007 -
APA
Lino, A. T., Borges, P. D., Scolfaro, L. M. R., Rodrigues, S. C. P., & Silva Junior, E. F. da. (2007). Optical properties and carrier effective masses of Rutile 'SnO IND.2' as obtained from full relativistic ab initio calculations. AIP Conference Proceedings. New York: The Institute. Recuperado de http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001000259000001&idtype=cvips&prog=normal -
NLM
Lino AT, Borges PD, Scolfaro LMR, Rodrigues SCP, Silva Junior EF da. Optical properties and carrier effective masses of Rutile 'SnO IND.2' as obtained from full relativistic ab initio calculations [Internet]. AIP Conference Proceedings. 2007 ; 893 529-530.[citado 2026 fev. 19 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001000259000001&idtype=cvips&prog=normal -
Vancouver
Lino AT, Borges PD, Scolfaro LMR, Rodrigues SCP, Silva Junior EF da. Optical properties and carrier effective masses of Rutile 'SnO IND.2' as obtained from full relativistic ab initio calculations [Internet]. AIP Conference Proceedings. 2007 ; 893 529-530.[citado 2026 fev. 19 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001000259000001&idtype=cvips&prog=normal - Improved density of states and effective charge density in SI/PECVD Si/OxNy interface
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