An improved model for the triangular SOI misalignment test structure (2004)
- Authors:
- Autor USP: MARTINO, JOAO ANTONIO - EP
- Unidade: EP
- Subjects: MICROELETRÔNICA; ELETROQUÍMICA; CIRCUITOS INTEGRADOS MOS
- Language: Inglês
- Imprenta:
- Publisher: The Electrochemical Society
- Publisher place: Pennington
- Date published: 2004
- ISBN: 1-56677-416-0
- Source:
- Conference titles: Symposium on Microelectronics Technology and Devices SBMICRO
-
ABNT
GIACOMINI, Renato Camargo e MARTINO, João Antonio. An improved model for the triangular SOI misalignment test structure. 2004, Anais.. Pennington: The Electrochemical Society, 2004. . Acesso em: 24 fev. 2026. -
APA
Giacomini, R. C., & Martino, J. A. (2004). An improved model for the triangular SOI misalignment test structure. In Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. Pennington: The Electrochemical Society. -
NLM
Giacomini RC, Martino JA. An improved model for the triangular SOI misalignment test structure. Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2026 fev. 24 ] -
Vancouver
Giacomini RC, Martino JA. An improved model for the triangular SOI misalignment test structure. Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2026 fev. 24 ] - Impact of TiN metal gate thickness and the HsSiO nitridation on MuGFETs electrical performance
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- Combined l and series resistance extraction of ldd mosfets
- Influencia da temperatura em transistores soi (silicon on insulator) mosfets
- Impact of substrate effect on the fully depleted soi mesfet subthreshold slope at 300k and 77k
- The impact of gate length scaling on UTBOX FDSOI devices: the digital/analog performance of extension-less structures
- Simple method for the determination of the interface trap density at 77k in fully depleted acumulation mode soi mosfets
- Transistor soi-nmosfet nao auto-alinhado
- Impact of selective epitaxial growth and uniaxial/biaxial strain on DIBL effect using triple gate FinFETs
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