Extraction of the oxide charge density at front and back interfaces of SOI nMOSFETs devices (2002)
- Authors:
- Autor USP: MARTINO, JOÃO ANTONIO - EP
- Unidade: EP
- DOI: 10.1016/s0038-1101(02)00067-9
- Assunto: FILMES FINOS
- Language: Inglês
- Imprenta:
- Source:
- Título: Solid-State Electronics
- ISSN: 0038-1101
- Volume/Número/Paginação/Ano: 46, n. 9, p. 1381-1387, September 2002
- Este periódico é de acesso aberto
- Este artigo NÃO é de acesso aberto
-
ABNT
NICOLETT, Aparecido Sirley et al. Extraction of the oxide charge density at front and back interfaces of SOI nMOSFETs devices. Solid-State Electronics, n. 9, p. 1381-1387, 2002Tradução . . Disponível em: https://doi.org/10.1016/s0038-1101(02)00067-9. Acesso em: 21 jan. 2026. -
APA
Nicolett, A. S., Martino, J. A., Simoen, E., & Claeys, C. (2002). Extraction of the oxide charge density at front and back interfaces of SOI nMOSFETs devices. Solid-State Electronics, ( 9), 1381-1387. doi:10.1016/s0038-1101(02)00067-9 -
NLM
Nicolett AS, Martino JA, Simoen E, Claeys C. Extraction of the oxide charge density at front and back interfaces of SOI nMOSFETs devices [Internet]. Solid-State Electronics. 2002 ;( 9): 1381-1387.[citado 2026 jan. 21 ] Available from: https://doi.org/10.1016/s0038-1101(02)00067-9 -
Vancouver
Nicolett AS, Martino JA, Simoen E, Claeys C. Extraction of the oxide charge density at front and back interfaces of SOI nMOSFETs devices [Internet]. Solid-State Electronics. 2002 ;( 9): 1381-1387.[citado 2026 jan. 21 ] Available from: https://doi.org/10.1016/s0038-1101(02)00067-9 - Analog performance and application of graded-channel fully depleted SOI MOSFETs
- Graded-channel fully depleted silicon-on-insulator nMOSFET for reducing the parasitic bipolar effects
- Projeto de processos de fabricação avançados aplicáveis nas tecnologias CMOS micrométricas
- Simple method to determine the poly gate doping concentration based on poly depletion effect
- A new technique to extract the oxide charge density at front and back interfaces of SOI nMOSFETs devices
- Influence of the gate oxide tunneling effect on the extraction of the silicon film and front oxide thickness in SOI nMOSFET
- A study of total series resistance and effective channel length comparing SOI nMOSFET and GC SOI nMOSFET in saturation region
- A simple method to model nonrectangular-gate layout in SOI MOSFETs
- New leakage drain current model for high temperature soi mesfet
- Influence of the substrate potential drop on fully depleted soi mesfet threshold voltage at 77k
Informações sobre o DOI: 10.1016/s0038-1101(02)00067-9 (Fonte: oaDOI API)
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