Electrical characterization of MOS capacitors with gate of nickel/aluminum (2001)
- Authors:
- Autor USP: SANTOS FILHO, SEBASTIAO GOMES DOS - EP
- Unidade: EP
- Assunto: MICROELETRÔNICA
- Language: Inglês
- Imprenta:
- Source:
- Título: Extended Abstracts
- Conference titles: Workshop of SIBRATI
-
ABNT
NAVIA, Alan Rodrigo e SANTOS FILHO, Sebastião Gomes dos. Electrical characterization of MOS capacitors with gate of nickel/aluminum. 2001, Anais.. São Paulo: EPUSP, 2001. Disponível em: http://www.lsi.usp.br/. Acesso em: 10 fev. 2026. -
APA
Navia, A. R., & Santos Filho, S. G. dos. (2001). Electrical characterization of MOS capacitors with gate of nickel/aluminum. In Extended Abstracts. São Paulo: EPUSP. Recuperado de http://www.lsi.usp.br/ -
NLM
Navia AR, Santos Filho SG dos. Electrical characterization of MOS capacitors with gate of nickel/aluminum [Internet]. Extended Abstracts. 2001 ;[citado 2026 fev. 10 ] Available from: http://www.lsi.usp.br/ -
Vancouver
Navia AR, Santos Filho SG dos. Electrical characterization of MOS capacitors with gate of nickel/aluminum [Internet]. Extended Abstracts. 2001 ;[citado 2026 fev. 10 ] Available from: http://www.lsi.usp.br/ - Nano-crystalline palladium-film catalysts deposited by e-beam evaporation aiming hydrogen sensing
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