Electrical characterization of MOS capacitors with gate of nickel/aluminum (2001)
- Autores:
- Autor USP: SANTOS FILHO, SEBASTIAO GOMES DOS - EP
- Unidade: EP
- Assunto: MICROELETRÔNICA
- Idioma: Inglês
- Imprenta:
- Fonte:
- Título do periódico: Extended Abstracts
- Nome do evento: Workshop of SIBRATI
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ABNT
NAVIA, Alan Rodrigo e SANTOS FILHO, Sebastião Gomes dos. Electrical characterization of MOS capacitors with gate of nickel/aluminum. 2001, Anais.. São Paulo: EPUSP, 2001. Disponível em: http://www.lsi.usp.br/. Acesso em: 18 set. 2024. -
APA
Navia, A. R., & Santos Filho, S. G. dos. (2001). Electrical characterization of MOS capacitors with gate of nickel/aluminum. In Extended Abstracts. São Paulo: EPUSP. Recuperado de http://www.lsi.usp.br/ -
NLM
Navia AR, Santos Filho SG dos. Electrical characterization of MOS capacitors with gate of nickel/aluminum [Internet]. Extended Abstracts. 2001 ;[citado 2024 set. 18 ] Available from: http://www.lsi.usp.br/ -
Vancouver
Navia AR, Santos Filho SG dos. Electrical characterization of MOS capacitors with gate of nickel/aluminum [Internet]. Extended Abstracts. 2001 ;[citado 2024 set. 18 ] Available from: http://www.lsi.usp.br/ - Formation of nickel silicides onto (100) silicon wafer surfaces using a thin platinum interlayer
- Characterization of a ISFET device as a ph sensor for applications in the industrial, environmental and biomedical fields
- Analysis of silicon surface microirregularities by laser light scattering
- Characterization of Ni/TiSi2 contacts fabricated onto N+P junctions
- Electrical and physical characterization of electroless nickel films on polysilicon gate electrodes
- Analysis of the surface roughness and surface particle concentration using a new technique: integrated angle resolved LASER scattering (IARLS)
- Simulations of an interference birefringent thin film filter used as a narrow-band polarizer
- Obtenção de oxinitretos de porta por processamento térmico rápido visando a fabricação de circuitos integrados MOS
- Partial dielectric breakdown in MOS gate oxide grown by RTO
- Electrical simulations of gate-controlled diodes in order to show their feasibility as luminous radiation sensors
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