Partial dielectric breakdown in MOS gate oxide grown by RTO (2000)
- Authors:
- USP affiliated authors: SANTOS FILHO, SEBASTIAO GOMES DOS - EP
- Unidades: EP
- Subjects: CIRCUITOS INTEGRADOS
- Language: Inglês
- Imprenta:
- Publisher: SBMicro/UA/UFRGS/UNICAMP/USP
- Place of publication: Manaus
- Date published: 2000
- Source:
- Título do periódico: SBMicro 2000: proceedings
- Conference title: International Conference on Microelectronics and Packaging
-
ABNT
NOGUEIRA, Willian Aurélio; SANTOS FILHO, Sebastião Gomes dos. Partial dielectric breakdown in MOS gate oxide grown by RTO. Anais.. Manaus: SBMicro/UA/UFRGS/UNICAMP/USP, 2000. -
APA
Nogueira, W. A., & Santos Filho, S. G. dos. (2000). Partial dielectric breakdown in MOS gate oxide grown by RTO. In SBMicro 2000: proceedings. Manaus: SBMicro/UA/UFRGS/UNICAMP/USP. -
NLM
Nogueira WA, Santos Filho SG dos. Partial dielectric breakdown in MOS gate oxide grown by RTO. SBMicro 2000: proceedings. 2000 ; -
Vancouver
Nogueira WA, Santos Filho SG dos. Partial dielectric breakdown in MOS gate oxide grown by RTO. SBMicro 2000: proceedings. 2000 ; - Simulacao numerica dos perfis de temperatura em fornos rtp
- Engenharia de superfícies e de interfaces aplicada na fabricação de circuitos integrados: cinética da oxidação térmica rápida do silício e deposição eletroquímica de metais
- Morphological characterization of electroless nickel films onto aluminum surfaces
- Formation and stability of Ni(Pt)Si/Poly-Si layered structure
- Growth and morphology of electroless cobalt thin films deposited onto palladium pre-activated silicon surfaces
- Characterization of thin MOS gate oxides grown in pyrogenic environment
- Fabrication and physical characterization of nickel nanowires formed by a template-based electrodeposition method
- Carbon-modified titanium dioxide deposited by e-beam aiming hydrogen sensing
- A practical procedure to match the measured capacitance of low and high frequency in order to obtain the energy distribution of the interface stated density
- Aplicação de filmes de siliceto de titanio e do escoamento térmico rapido de camadas de PSG na fabricação de circuitos integrados nMOS
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
