Characterization of thin MOS gate oxides grown in pyrogenic environment (2004)
- Authors:
- Autor USP: SANTOS FILHO, SEBASTIAO GOMES DOS - EP
- Unidade: EP
- Subjects: MICROELETRÔNICA; FILMES FINOS; CIRCUITOS INTEGRADOS MOS
- Language: Inglês
- Imprenta:
- Publisher: The Electrochemical Society
- Publisher place: Pennington
- Date published: 2004
- ISBN: 1-56677-416-0
- Source:
- Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO
-
ABNT
NOGUEIRA, Willian Aurélio e SANTOS FILHO, Sebastião Gomes dos. Characterization of thin MOS gate oxides grown in pyrogenic environment. 2004, Anais.. Pennington: The Electrochemical Society, 2004. . Acesso em: 23 jan. 2026. -
APA
Nogueira, W. A., & Santos Filho, S. G. dos. (2004). Characterization of thin MOS gate oxides grown in pyrogenic environment. In Microelectronics technology and devices SBMicro 2004.. Pennington: The Electrochemical Society. -
NLM
Nogueira WA, Santos Filho SG dos. Characterization of thin MOS gate oxides grown in pyrogenic environment. Microelectronics technology and devices SBMicro 2004. 2004 ;[citado 2026 jan. 23 ] -
Vancouver
Nogueira WA, Santos Filho SG dos. Characterization of thin MOS gate oxides grown in pyrogenic environment. Microelectronics technology and devices SBMicro 2004. 2004 ;[citado 2026 jan. 23 ] - Formation and stability of Ni(Pt)Si/Poly-Si layered structure
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