Influence of the 'SI' / 'SI''O IND.2' interface roughness on electronic roughness (1995)
- Authors:
- Autor USP: SANTOS FILHO, SEBASTIAO GOMES DOS - EP
- Unidade: EP
- Assunto: CIRCUITOS INTEGRADOS
- Language: Inglês
- Imprenta:
- Publisher: Instituto de Informatica da Ufrgs
- Publisher place: Porto Alegre
- Date published: 1995
- Source:
- Título: Proceedings
- Conference titles: Congress of the Brazilian Microelectronics Society
-
ABNT
LOPES, M C V et al. Influence of the 'SI' / 'SI''O IND.2' interface roughness on electronic roughness. 1995, Anais.. Porto Alegre: Instituto de Informatica da Ufrgs, 1995. . Acesso em: 07 out. 2024. -
APA
Lopes, M. C. V., Santos Filho, S. G. dos, Hasenack, C. M., & Baranauskas, V. (1995). Influence of the 'SI' / 'SI''O IND.2' interface roughness on electronic roughness. In Proceedings. Porto Alegre: Instituto de Informatica da Ufrgs. -
NLM
Lopes MCV, Santos Filho SG dos, Hasenack CM, Baranauskas V. Influence of the 'SI' / 'SI''O IND.2' interface roughness on electronic roughness. Proceedings. 1995 ;[citado 2024 out. 07 ] -
Vancouver
Lopes MCV, Santos Filho SG dos, Hasenack CM, Baranauskas V. Influence of the 'SI' / 'SI''O IND.2' interface roughness on electronic roughness. Proceedings. 1995 ;[citado 2024 out. 07 ] - Formation of nickel silicides onto (100) silicon wafer surfaces using a thin platinum interlayer
- Characterization of a ISFET device as a ph sensor for applications in the industrial, environmental and biomedical fields
- Analysis of silicon surface microirregularities by laser light scattering
- Characterization of Ni/TiSi2 contacts fabricated onto N+P junctions
- Electrical and physical characterization of electroless nickel films on polysilicon gate electrodes
- Analysis of the surface roughness and surface particle concentration using a new technique: integrated angle resolved LASER scattering (IARLS)
- Simulations of an interference birefringent thin film filter used as a narrow-band polarizer
- Obtenção de oxinitretos de porta por processamento térmico rápido visando a fabricação de circuitos integrados MOS
- Partial dielectric breakdown in MOS gate oxide grown by RTO
- Electrical simulations of gate-controlled diodes in order to show their feasibility as luminous radiation sensors
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