Study of the leakage drain current carriers in silicon-on-insulator MOSFETs at high temperatures (2001)
- Authors:
- Autor USP: MARTINO, JOAO ANTONIO - EP
- Unidade: EP
- DOI: 10.1016/s0038-1101(01)00099-5
- Assunto: CIRCUITOS INTEGRADOS
- Language: Inglês
- Imprenta:
- Publisher place: Kidlington
- Date published: 2001
- Source:
- Título: Solid-State Electronics
- ISSN: 0038-1101
- Volume/Número/Paginação/Ano: v. 45, n.5, p.683-688, May 2001
- Este periódico é de acesso aberto
- Este artigo NÃO é de acesso aberto
-
ABNT
BELLODI, Marcello e MARTINO, João Antonio. Study of the leakage drain current carriers in silicon-on-insulator MOSFETs at high temperatures. Solid-State Electronics, v. 45, n. 5, p. 683-688, 2001Tradução . . Disponível em: https://doi.org/10.1016/s0038-1101(01)00099-5. Acesso em: 20 jan. 2026. -
APA
Bellodi, M., & Martino, J. A. (2001). Study of the leakage drain current carriers in silicon-on-insulator MOSFETs at high temperatures. Solid-State Electronics, 45( 5), 683-688. doi:10.1016/s0038-1101(01)00099-5 -
NLM
Bellodi M, Martino JA. Study of the leakage drain current carriers in silicon-on-insulator MOSFETs at high temperatures [Internet]. Solid-State Electronics. 2001 ; 45( 5): 683-688.[citado 2026 jan. 20 ] Available from: https://doi.org/10.1016/s0038-1101(01)00099-5 -
Vancouver
Bellodi M, Martino JA. Study of the leakage drain current carriers in silicon-on-insulator MOSFETs at high temperatures [Internet]. Solid-State Electronics. 2001 ; 45( 5): 683-688.[citado 2026 jan. 20 ] Available from: https://doi.org/10.1016/s0038-1101(01)00099-5 - Analog performance and application of graded-channel fully depleted SOI MOSFETs
- Graded-channel fully depleted silicon-on-insulator nMOSFET for reducing the parasitic bipolar effects
- Projeto de processos de fabricação avançados aplicáveis nas tecnologias CMOS micrométricas
- Simple method to determine the poly gate doping concentration based on poly depletion effect
- A new technique to extract the oxide charge density at front and back interfaces of SOI nMOSFETs devices
- Influence of the gate oxide tunneling effect on the extraction of the silicon film and front oxide thickness in SOI nMOSFET
- A study of total series resistance and effective channel length comparing SOI nMOSFET and GC SOI nMOSFET in saturation region
- A simple method to model nonrectangular-gate layout in SOI MOSFETs
- New leakage drain current model for high temperature soi mesfet
- Influence of the substrate potential drop on fully depleted soi mesfet threshold voltage at 77k
Informações sobre o DOI: 10.1016/s0038-1101(01)00099-5 (Fonte: oaDOI API)
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