Mechanisms of surface roughness induced in silicon by fluorine containing plasmas (1997)
- Authors:
- USP affiliated authors: VERDONCK, PATRICK BERNARD - EP ; MANSANO, RONALDO DOMINGUES - EP ; MACIEL, HOMERO SANTIAGO - EP
- Unidade: EP
- DOI: 10.1016/s0042-207x(97)00067-5
- Assunto: CIRCUITOS INTEGRADOS
- Language: Inglês
- Imprenta:
- Source:
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
MANSANO, Ronaldo Domingues e VERDONCK, Patrick Bernard e MACIEL, Homero Santiago. Mechanisms of surface roughness induced in silicon by fluorine containing plasmas. Vaccum, v. 48, n. 7-9, p. 677-679, 1997Tradução . . Disponível em: https://doi.org/10.1016/s0042-207x(97)00067-5. Acesso em: 31 dez. 2025. -
APA
Mansano, R. D., Verdonck, P. B., & Maciel, H. S. (1997). Mechanisms of surface roughness induced in silicon by fluorine containing plasmas. Vaccum, 48( 7-9), 677-679. doi:10.1016/s0042-207x(97)00067-5 -
NLM
Mansano RD, Verdonck PB, Maciel HS. Mechanisms of surface roughness induced in silicon by fluorine containing plasmas [Internet]. Vaccum. 1997 ; 48( 7-9): 677-679.[citado 2025 dez. 31 ] Available from: https://doi.org/10.1016/s0042-207x(97)00067-5 -
Vancouver
Mansano RD, Verdonck PB, Maciel HS. Mechanisms of surface roughness induced in silicon by fluorine containing plasmas [Internet]. Vaccum. 1997 ; 48( 7-9): 677-679.[citado 2025 dez. 31 ] Available from: https://doi.org/10.1016/s0042-207x(97)00067-5 - Characterization of mode transitions for RF discharges in different gases
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Informações sobre o DOI: 10.1016/s0042-207x(97)00067-5 (Fonte: oaDOI API)
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