A new method to extract the LDD doping concentration on fully depleted SOI nMOSFET at 300 K (2000)
- Authors:
- Autor USP: MARTINO, JOÃO ANTONIO - EP
- Unidade: EP
- Assunto: CIRCUITOS INTEGRADOS
- Language: Inglês
- Imprenta:
- Publisher: IEEE
- Publisher place: Piscataway
- Date published: 2000
- Source:
- Título: Proceedings
- Conference titles: IEEE International Conference on Devices, Circuits and Syems
-
ABNT
NICOLETT, Aparecido Sirley et al. A new method to extract the LDD doping concentration on fully depleted SOI nMOSFET at 300 K. 2000, Anais.. Piscataway: IEEE, 2000. . Acesso em: 13 mar. 2026. -
APA
Nicolett, A. S., Martino, J. A., Simoen, E., & Claeys, C. (2000). A new method to extract the LDD doping concentration on fully depleted SOI nMOSFET at 300 K. In Proceedings. Piscataway: IEEE. -
NLM
Nicolett AS, Martino JA, Simoen E, Claeys C. A new method to extract the LDD doping concentration on fully depleted SOI nMOSFET at 300 K. Proceedings. 2000 ;[citado 2026 mar. 13 ] -
Vancouver
Nicolett AS, Martino JA, Simoen E, Claeys C. A new method to extract the LDD doping concentration on fully depleted SOI nMOSFET at 300 K. Proceedings. 2000 ;[citado 2026 mar. 13 ] - Impact of TiN metal gate thickness and the HsSiO nitridation on MuGFETs electrical performance
- Caracterização elétrica de dispositivos SOI MOS em baixa temperatura
- Metodo simples para a obtencao da densidade de armadilhas na primeira e segunda interface em soi-mosfet
- Combined l and series resistance extraction of ldd mosfets
- Influencia da temperatura em transistores soi (silicon on insulator) mosfets
- Impact of substrate effect on the fully depleted soi mesfet subthreshold slope at 300k and 77k
- The impact of gate length scaling on UTBOX FDSOI devices: the digital/analog performance of extension-less structures
- Simple method for the determination of the interface trap density at 77k in fully depleted acumulation mode soi mosfets
- Transistor soi-nmosfet nao auto-alinhado
- Impact of selective epitaxial growth and uniaxial/biaxial strain on DIBL effect using triple gate FinFETs
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