Modeling of the leakage drain current in accumulation mode SOI pMOSFETs for high-temperature applications (2001)
- Authors:
- Autor USP: MARTINO, JOÃO ANTONIO - EP
- Unidade: EP
- Assunto: CIRCUITOS INTEGRADOS
- Language: Inglês
- Imprenta:
- Publisher: The Electrochemical Society
- Publisher place: Pennington
- Date published: 2001
- Source:
- Título: Proceedings
- Conference titles: International Symposium on Silicon-on-Insulator Technology and Devices
-
ABNT
BELLODI, Marcello et al. Modeling of the leakage drain current in accumulation mode SOI pMOSFETs for high-temperature applications. 2001, Anais.. Pennington: The Electrochemical Society, 2001. . Acesso em: 14 fev. 2026. -
APA
Bellodi, M., Iniguez, B., Flandre, D., & Martino, J. A. (2001). Modeling of the leakage drain current in accumulation mode SOI pMOSFETs for high-temperature applications. In Proceedings. Pennington: The Electrochemical Society. -
NLM
Bellodi M, Iniguez B, Flandre D, Martino JA. Modeling of the leakage drain current in accumulation mode SOI pMOSFETs for high-temperature applications. Proceedings. 2001 ;[citado 2026 fev. 14 ] -
Vancouver
Bellodi M, Iniguez B, Flandre D, Martino JA. Modeling of the leakage drain current in accumulation mode SOI pMOSFETs for high-temperature applications. Proceedings. 2001 ;[citado 2026 fev. 14 ] - Impact of TiN metal gate thickness and the HsSiO nitridation on MuGFETs electrical performance
- Caracterização elétrica de dispositivos SOI MOS em baixa temperatura
- Metodo simples para a obtencao da densidade de armadilhas na primeira e segunda interface em soi-mosfet
- Combined l and series resistance extraction of ldd mosfets
- Influencia da temperatura em transistores soi (silicon on insulator) mosfets
- Impact of substrate effect on the fully depleted soi mesfet subthreshold slope at 300k and 77k
- The impact of gate length scaling on UTBOX FDSOI devices: the digital/analog performance of extension-less structures
- Simple method for the determination of the interface trap density at 77k in fully depleted acumulation mode soi mosfets
- Transistor soi-nmosfet nao auto-alinhado
- Impact of selective epitaxial growth and uniaxial/biaxial strain on DIBL effect using triple gate FinFETs
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