Diodes model for the leakage drain current in enhancement-mode SOI nMOSFETs at 300°C (2000)
- Authors:
- Autor USP: MARTINO, JOÃO ANTONIO - EP
- Unidade: EP
- Assunto: CIRCUITOS INTEGRADOS
- Language: Inglês
- Imprenta:
- Publisher: SBMicro/UA/UFRGS/UNICAMP/USP
- Publisher place: Manaus
- Date published: 2000
- Source:
- Título: SBMicro 2000 : proceedings
- Conference titles: International Conference on Microelectronics and Packaging
-
ABNT
BELLODI, Marcello et al. Diodes model for the leakage drain current in enhancement-mode SOI nMOSFETs at 300°C. 2000, Anais.. Manaus: SBMicro/UA/UFRGS/UNICAMP/USP, 2000. . Acesso em: 15 fev. 2026. -
APA
Bellodi, M., Iniguez, B., Flandre, D., & Martino, J. A. (2000). Diodes model for the leakage drain current in enhancement-mode SOI nMOSFETs at 300°C. In SBMicro 2000 : proceedings. Manaus: SBMicro/UA/UFRGS/UNICAMP/USP. -
NLM
Bellodi M, Iniguez B, Flandre D, Martino JA. Diodes model for the leakage drain current in enhancement-mode SOI nMOSFETs at 300°C. SBMicro 2000 : proceedings. 2000 ;[citado 2026 fev. 15 ] -
Vancouver
Bellodi M, Iniguez B, Flandre D, Martino JA. Diodes model for the leakage drain current in enhancement-mode SOI nMOSFETs at 300°C. SBMicro 2000 : proceedings. 2000 ;[citado 2026 fev. 15 ] - Impact of TiN metal gate thickness and the HsSiO nitridation on MuGFETs electrical performance
- Caracterização elétrica de dispositivos SOI MOS em baixa temperatura
- Metodo simples para a obtencao da densidade de armadilhas na primeira e segunda interface em soi-mosfet
- Combined l and series resistance extraction of ldd mosfets
- Influencia da temperatura em transistores soi (silicon on insulator) mosfets
- Impact of substrate effect on the fully depleted soi mesfet subthreshold slope at 300k and 77k
- The impact of gate length scaling on UTBOX FDSOI devices: the digital/analog performance of extension-less structures
- Simple method for the determination of the interface trap density at 77k in fully depleted acumulation mode soi mosfets
- Transistor soi-nmosfet nao auto-alinhado
- Impact of selective epitaxial growth and uniaxial/biaxial strain on DIBL effect using triple gate FinFETs
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