Raman measurements of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures (2000)
- Authors:
- Autor USP: BASMAJI, PIERRE - IFSC
- Unidade: IFSC
- DOI: 10.1063/1.372097
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Publisher place: College Park
- Date published: 2000
- Source:
- Título: Journal of Applied Physics
- Volume/Número/Paginação/Ano: v. 87, n. 4, p. 1825-1831, Feb. 2000
- Este periódico é de acesso aberto
- Este artigo NÃO é de acesso aberto
-
ABNT
PUSEP, Yuri A et al. Raman measurements of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures. Journal of Applied Physics, v. 87, n. 4, p. 1825-1831, 2000Tradução . . Disponível em: https://doi.org/10.1063/1.372097. Acesso em: 27 jan. 2026. -
APA
Pusep, Y. A., Silva, M. T. O., Galzerani, J. C., Rodrigues, S. C. P., Scolfaro, L. M. R., Lima, A. P., et al. (2000). Raman measurements of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures. Journal of Applied Physics, 87( 4), 1825-1831. doi:10.1063/1.372097 -
NLM
Pusep YA, Silva MTO, Galzerani JC, Rodrigues SCP, Scolfaro LMR, Lima AP, Quivy AA, Leite JR, Moshegov NT, Basmaji P. Raman measurements of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures [Internet]. Journal of Applied Physics. 2000 ; 87( 4): 1825-1831.[citado 2026 jan. 27 ] Available from: https://doi.org/10.1063/1.372097 -
Vancouver
Pusep YA, Silva MTO, Galzerani JC, Rodrigues SCP, Scolfaro LMR, Lima AP, Quivy AA, Leite JR, Moshegov NT, Basmaji P. Raman measurements of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures [Internet]. Journal of Applied Physics. 2000 ; 87( 4): 1825-1831.[citado 2026 jan. 27 ] Available from: https://doi.org/10.1063/1.372097 - Evidence of localized luminescence centers in porous silicon
- Properties of 'AL IND.X''GA IND.1-X''AS' with an 'AL''AS' buffer layer on 'SI' substrates grown by metalorganic vapor phase epitaxy
- Luminescence degradation and fatigue effects in porous silicon
- Ion incorporation and exchange effects in porous silicon
- Optical absorption in porous silicon of high porosity
- Formacao natural de pontos quanticos
- Propriedades óticas, estruturais e elétricas de camadas múltiplas de pontos quânticos naturais de InAs crescidos sobre substrato de GaAs
- Capacitance-voltage characterization of InAs and InGaAs quantum dots
- Surface phonon and 'E IND.1' gap shift observed in 'IN''AS' wire crystals on porous 'SI'
- Low dimensional quantum structures grown by molecular beam epitaxy
Informações sobre o DOI: 10.1063/1.372097 (Fonte: oaDOI API)
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