Luminescence degradation and fatigue effects in porous silicon (1994)
- Authors:
- Autor USP: BASMAJI, PIERRE - IFSC
- Unidade: IFSC
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título: Brazilian Journal of Physics
- Volume/Número/Paginação/Ano: v.24, n.1 , p.349-52, mar. 1994
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ABNT
GRIVICKAS, V et al. Luminescence degradation and fatigue effects in porous silicon. Brazilian Journal of Physics, v. 24, n. 1 , p. 349-52, 1994Tradução . . Acesso em: 25 jan. 2026. -
APA
Grivickas, V., Kolenda, J., Bernussi, A. A., Matvienko, B., & Basmaji, P. (1994). Luminescence degradation and fatigue effects in porous silicon. Brazilian Journal of Physics, 24( 1 ), 349-52. -
NLM
Grivickas V, Kolenda J, Bernussi AA, Matvienko B, Basmaji P. Luminescence degradation and fatigue effects in porous silicon. Brazilian Journal of Physics. 1994 ;24( 1 ): 349-52.[citado 2026 jan. 25 ] -
Vancouver
Grivickas V, Kolenda J, Bernussi AA, Matvienko B, Basmaji P. Luminescence degradation and fatigue effects in porous silicon. Brazilian Journal of Physics. 1994 ;24( 1 ): 349-52.[citado 2026 jan. 25 ] - Evidence of localized luminescence centers in porous silicon
- Properties of 'AL IND.X''GA IND.1-X''AS' with an 'AL''AS' buffer layer on 'SI' substrates grown by metalorganic vapor phase epitaxy
- Ion incorporation and exchange effects in porous silicon
- Optical absorption in porous silicon of high porosity
- Formacao natural de pontos quanticos
- Propriedades óticas, estruturais e elétricas de camadas múltiplas de pontos quânticos naturais de InAs crescidos sobre substrato de GaAs
- Capacitance-voltage characterization of InAs and InGaAs quantum dots
- Surface phonon and 'E IND.1' gap shift observed in 'IN''AS' wire crystals on porous 'SI'
- Low dimensional quantum structures grown by molecular beam epitaxy
- Break-down of raman selection rules for optic confined photons caused by the different arrangements of the normal and inverted interfaces in GaAs/AlAs superlattices
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