Surface phonon and 'E IND.1' gap shift observed in 'IN''AS' wire crystals on porous 'SI' (1994)
- Authors:
- Autor USP: BASMAJI, PIERRE - IFSC
- Unidade: IFSC
- Subjects: MATÉRIA CONDENSADA; MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título: Abstracts
- Conference titles: International Conference on the Physics of Semiconductors
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ABNT
SILVA, S W et al. Surface phonon and 'E IND.1' gap shift observed in 'IN''AS' wire crystals on porous 'SI'. 1994, Anais.. Vancouver: Instituto de Física de São Carlos, Universidade de São Paulo, 1994. . Acesso em: 27 dez. 2025. -
APA
Silva, S. W., Pizani, P. S., Rossi, J. C., Galzerani, J. C., Mlayah, A., Carles, R., et al. (1994). Surface phonon and 'E IND.1' gap shift observed in 'IN''AS' wire crystals on porous 'SI'. In Abstracts. Vancouver: Instituto de Física de São Carlos, Universidade de São Paulo. -
NLM
Silva SW, Pizani PS, Rossi JC, Galzerani JC, Mlayah A, Carles R, Lubyshev DI, Basmaji P. Surface phonon and 'E IND.1' gap shift observed in 'IN''AS' wire crystals on porous 'SI'. Abstracts. 1994 ;[citado 2025 dez. 27 ] -
Vancouver
Silva SW, Pizani PS, Rossi JC, Galzerani JC, Mlayah A, Carles R, Lubyshev DI, Basmaji P. Surface phonon and 'E IND.1' gap shift observed in 'IN''AS' wire crystals on porous 'SI'. Abstracts. 1994 ;[citado 2025 dez. 27 ] - Nano estruturas luminescentes de silicio poroso fabricado pelo processo eletroquimico
- Properties of 'AL IND.X''GA IND.1-X''AS' with an 'AL''AS' buffer layer on 'SI' substrates grown by metalorganic vapor phase epitaxy
- Photoluminescence fatigue-effect cycling in porous silicon
- Shallow and deep dx center in 'PB'-doped 'AL IND.X''GA IND.1-X''AS'
- Capacitance-voltage characterization of InAs and InGaAs quantum dots
- Hydrostatic pressure studies of GaAs tunnel diodes
- Surface phonon observed in GaAs wire crystals grown on porous Si
- Atomic-scale characterization of interfaces in the GaAs/AlAs superlattices
- Evidence of localized luminescence centers in porous silicon
- Kinetic limit of segregation during the molecular beam epitaxy of GaAs/AlAs heterostructures
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