Kinetic limit of segregation during the molecular beam epitaxy of GaAs/AlAs heterostructures (1998)
- Authors:
- Autor USP: BASMAJI, PIERRE - IFSC
- Unidade: IFSC
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título: Physics of Low-Dimensional Structures
- Volume/Número/Paginação/Ano: v.1/2, p. 237-242, 1998
- Conference titles: International Conference on Superlattices, Microstructures and Microdevices
-
ABNT
ZANELATTO, G et al. Kinetic limit of segregation during the molecular beam epitaxy of GaAs/AlAs heterostructures. Physics of Low-Dimensional Structures. Moscou: Instituto de Física de São Carlos, Universidade de São Paulo. . Acesso em: 27 dez. 2025. , 1998 -
APA
Zanelatto, G., Pusep, Y. A., Galzerani, J. C., González-Borrero, P. P., Lubyshev, D., & Basmaji, P. (1998). Kinetic limit of segregation during the molecular beam epitaxy of GaAs/AlAs heterostructures. Physics of Low-Dimensional Structures. Moscou: Instituto de Física de São Carlos, Universidade de São Paulo. -
NLM
Zanelatto G, Pusep YA, Galzerani JC, González-Borrero PP, Lubyshev D, Basmaji P. Kinetic limit of segregation during the molecular beam epitaxy of GaAs/AlAs heterostructures. Physics of Low-Dimensional Structures. 1998 ;1/2 237-242.[citado 2025 dez. 27 ] -
Vancouver
Zanelatto G, Pusep YA, Galzerani JC, González-Borrero PP, Lubyshev D, Basmaji P. Kinetic limit of segregation during the molecular beam epitaxy of GaAs/AlAs heterostructures. Physics of Low-Dimensional Structures. 1998 ;1/2 237-242.[citado 2025 dez. 27 ] - Nano estruturas luminescentes de silicio poroso fabricado pelo processo eletroquimico
- Properties of 'AL IND.X''GA IND.1-X''AS' with an 'AL''AS' buffer layer on 'SI' substrates grown by metalorganic vapor phase epitaxy
- Surface phonon and 'E IND.1' gap shift observed in 'IN''AS' wire crystals on porous 'SI'
- Photoluminescence fatigue-effect cycling in porous silicon
- Shallow and deep dx center in 'PB'-doped 'AL IND.X''GA IND.1-X''AS'
- Capacitance-voltage characterization of InAs and InGaAs quantum dots
- Hydrostatic pressure studies of GaAs tunnel diodes
- Surface phonon observed in GaAs wire crystals grown on porous Si
- Atomic-scale characterization of interfaces in the GaAs/AlAs superlattices
- Evidence of localized luminescence centers in porous silicon
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