Evidence of localized luminescence centers in porous silicon (1994)
- Authors:
- Autor USP: BASMAJI, PIERRE - IFSC
- Unidade: IFSC
- Subjects: MATÉRIA CONDENSADA; MATÉRIA CONDENSADA; SUPERFÍCIE FÍSICA
- Language: Inglês
- Imprenta:
- Source:
- Título: Program and Abstracts
- Conference titles: International Conference on Superlattices Microstructures and Microdevices - ICSMM
-
ABNT
BASMAJI, Pierre e MATVIENKO, B e GUIMARÃES, Francisco Eduardo Gontijo. Evidence of localized luminescence centers in porous silicon. 1994, Anais.. Alberta: Instituto de Física de São Carlos, Universidade de São Paulo, 1994. . Acesso em: 28 dez. 2025. -
APA
Basmaji, P., Matvienko, B., & Guimarães, F. E. G. (1994). Evidence of localized luminescence centers in porous silicon. In Program and Abstracts. Alberta: Instituto de Física de São Carlos, Universidade de São Paulo. -
NLM
Basmaji P, Matvienko B, Guimarães FEG. Evidence of localized luminescence centers in porous silicon. Program and Abstracts. 1994 ;[citado 2025 dez. 28 ] -
Vancouver
Basmaji P, Matvienko B, Guimarães FEG. Evidence of localized luminescence centers in porous silicon. Program and Abstracts. 1994 ;[citado 2025 dez. 28 ] - Nano estruturas luminescentes de silicio poroso fabricado pelo processo eletroquimico
- Properties of 'AL IND.X''GA IND.1-X''AS' with an 'AL''AS' buffer layer on 'SI' substrates grown by metalorganic vapor phase epitaxy
- Surface phonon and 'E IND.1' gap shift observed in 'IN''AS' wire crystals on porous 'SI'
- Photoluminescence fatigue-effect cycling in porous silicon
- Shallow and deep dx center in 'PB'-doped 'AL IND.X''GA IND.1-X''AS'
- Capacitance-voltage characterization of InAs and InGaAs quantum dots
- Hydrostatic pressure studies of GaAs tunnel diodes
- Surface phonon observed in GaAs wire crystals grown on porous Si
- Atomic-scale characterization of interfaces in the GaAs/AlAs superlattices
- Kinetic limit of segregation during the molecular beam epitaxy of GaAs/AlAs heterostructures
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